We report magnetotransport measurements of a SiGe heterostructure containing a 20 nm p-Ge quantum well with a mobility of 800 000 cm2 V−1 s−1. By dry etching arrays of wires with widths between 1.0 μm and 3.0 μm, we were able to measure the lateral depletion thickness, built-in potential, and the phase coherence length of the quantum well. Fourier analysis does not show any Rashba related spin-splitting despite clearly defined Shubnikov-de Haas oscillations being observed up to a filling factor of ν = 22. Exchange-enhanced spin-splitting is observed for filling factors below ν = 9. An analysis of boundary scattering effects indicates lateral depletion of the hole gas by 0.5 ± 0.1 μm from the etched germanium surface. The built-in potential is found to be 0.25 ± 0.04 V, presenting an energy barrier for lateral transport greater than the hole confinement energy. A large phase coherence length of 3.5 ± 0.5 μm is obtained in these wires at 1.7 K.
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27 April 2015
Research Article|
April 28 2015
Magnetotransport in p-type Ge quantum well narrow wire arrays Available to Purchase
P. J. Newton;
P. J. Newton
a)
1Department of Physics, Cavendish Laboratory,
University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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J. Llandro;
J. Llandro
1Department of Physics, Cavendish Laboratory,
University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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R. Mansell
;
R. Mansell
1Department of Physics, Cavendish Laboratory,
University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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S. N. Holmes;
S. N. Holmes
2Toshiba Research Europe Limited,
Cambridge Research Laboratory
, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom
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C. Morrison;
C. Morrison
3Department of Physics,
University of Warwick
, Coventry CV4 7AL, United Kingdom
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J. Foronda;
J. Foronda
3Department of Physics,
University of Warwick
, Coventry CV4 7AL, United Kingdom
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M. Myronov;
M. Myronov
3Department of Physics,
University of Warwick
, Coventry CV4 7AL, United Kingdom
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D. R. Leadley
;
D. R. Leadley
3Department of Physics,
University of Warwick
, Coventry CV4 7AL, United Kingdom
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C. H. W. Barnes
C. H. W. Barnes
1Department of Physics, Cavendish Laboratory,
University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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P. J. Newton
1,a)
J. Llandro
1
R. Mansell
1
S. N. Holmes
2
C. Morrison
3
J. Foronda
3
M. Myronov
3
D. R. Leadley
3
C. H. W. Barnes
1
1Department of Physics, Cavendish Laboratory,
University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
2Toshiba Research Europe Limited,
Cambridge Research Laboratory
, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom
3Department of Physics,
University of Warwick
, Coventry CV4 7AL, United Kingdom
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
Appl. Phys. Lett. 106, 172102 (2015)
Article history
Received:
March 23 2015
Accepted:
April 14 2015
Citation
P. J. Newton, J. Llandro, R. Mansell, S. N. Holmes, C. Morrison, J. Foronda, M. Myronov, D. R. Leadley, C. H. W. Barnes; Magnetotransport in p-type Ge quantum well narrow wire arrays. Appl. Phys. Lett. 27 April 2015; 106 (17): 172102. https://doi.org/10.1063/1.4919053
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