We study the dependence of the spin stiffness constant on the phosphorus concentration in the ferromagnetic semiconductor (Ga,Mn)(As,P) with the aim of determining whether alloying with phosphorus is detrimental, neutral, or advantageous to the spin stiffness. Time-resolved magneto-optical experiments are carried out in thin epilayers. Laser pulses excite two perpendicular standing spin wave modes, which are exchange related. We show that the first mode is spatially uniform across the layer corresponding to a wavevector. From the two frequencies and k-vector spacings we obtain the spin stiffness constant for different phosphorus concentrations using weak surface pinning conditions. The mode assessment is checked by comparison to the spin stiffness obtained from domain pattern analysis for samples with out-of-plane magnetization. The spin stiffness is found to exhibit little variation with phosphorus concentration in contradiction with ab-initio predictions.
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6 April 2015
Research Article|
April 10 2015
Systematic study of the spin stiffness dependence on phosphorus alloying in the ferromagnetic semiconductor (Ga,Mn)As
S. Shihab;
S. Shihab
1CNRS, UMR7588,
Institut des Nanosciences de Paris
, 4 place Jussieu, 75005 Paris, France
2
Sorbonne Universités
, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris, France
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H. Riahi;
H. Riahi
3Laboratoire Matériaux Molécules et Applications, IPEST,
Université de Carthage
, B.P. 51, 2075 La Marsa, Tunisia
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L. Thevenard;
L. Thevenard
1CNRS, UMR7588,
Institut des Nanosciences de Paris
, 4 place Jussieu, 75005 Paris, France
2
Sorbonne Universités
, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris, France
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H. J. von Bardeleben;
H. J. von Bardeleben
1CNRS, UMR7588,
Institut des Nanosciences de Paris
, 4 place Jussieu, 75005 Paris, France
2
Sorbonne Universités
, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris, France
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A. Lemaître;
A. Lemaître
4
Laboratoire de Photonique et Nanostructures
, CNRS, UPR 20, Route de Nozay, 91460 Marcoussis, France
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C. Gourdon
C. Gourdon
1CNRS, UMR7588,
Institut des Nanosciences de Paris
, 4 place Jussieu, 75005 Paris, France
2
Sorbonne Universités
, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris, France
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Appl. Phys. Lett. 106, 142408 (2015)
Article history
Received:
February 09 2015
Accepted:
April 01 2015
Citation
S. Shihab, H. Riahi, L. Thevenard, H. J. von Bardeleben, A. Lemaître, C. Gourdon; Systematic study of the spin stiffness dependence on phosphorus alloying in the ferromagnetic semiconductor (Ga,Mn)As. Appl. Phys. Lett. 6 April 2015; 106 (14): 142408. https://doi.org/10.1063/1.4917423
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