Electronic structures of copper hexadecafluorophthalocyanine (F16CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H2 plasma treatment. By increasing the treatment time of H2 plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F16CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.
Effects of graphene defect on electronic structures of its interface with organic semiconductor
Qing-Dan Yang, Wei-Dong Dou, Chundong Wang, Hin-Wai Mo, Ming-Fai Lo, Muk Fung Yuen, Tsz-Wai Ng, Wen-Jun Zhang, Sai-Wing Tsang, Chun-Sing Lee; Effects of graphene defect on electronic structures of its interface with organic semiconductor. Appl. Phys. Lett. 30 March 2015; 106 (13): 133502. https://doi.org/10.1063/1.4916736
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