Electronic structures of copper hexadecafluorophthalocyanine (F16CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H2 plasma treatment. By increasing the treatment time of H2 plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F16CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.
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30 March 2015
Research Article|
March 30 2015
Effects of graphene defect on electronic structures of its interface with organic semiconductor
Qing-Dan Yang;
Qing-Dan Yang
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Wei-Dong Dou
;
Wei-Dong Dou
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
2Physics Department,
Shaoxing University
, Shaoxing 312000, People's Republic of China
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Chundong Wang;
Chundong Wang
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Hin-Wai Mo;
Hin-Wai Mo
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Ming-Fai Lo;
Ming-Fai Lo
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Muk Fung Yuen;
Muk Fung Yuen
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Tsz-Wai Ng;
Tsz-Wai Ng
a)
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Wen-Jun Zhang;
Wen-Jun Zhang
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Sai-Wing Tsang;
Sai-Wing Tsang
3Department of Physics and Materials Science,
City University of Hong Kong
, Hong Kong
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Chun-Sing Lee
Chun-Sing Lee
a)
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
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Qing-Dan Yang
1
Wei-Dong Dou
1,2
Chundong Wang
1
Hin-Wai Mo
1
Ming-Fai Lo
1
Muk Fung Yuen
1
Tsz-Wai Ng
1,a)
Wen-Jun Zhang
1
Sai-Wing Tsang
3
Chun-Sing Lee
1,a)
1Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF),
City University of Hong Kong
, Hong Kong
2Physics Department,
Shaoxing University
, Shaoxing 312000, People's Republic of China
3Department of Physics and Materials Science,
City University of Hong Kong
, Hong Kong
a)
Authors to whom correspondence should be addressed. Electronic addresses: [email protected] and [email protected]
Appl. Phys. Lett. 106, 133502 (2015)
Article history
Received:
November 04 2014
Accepted:
March 23 2015
Citation
Qing-Dan Yang, Wei-Dong Dou, Chundong Wang, Hin-Wai Mo, Ming-Fai Lo, Muk Fung Yuen, Tsz-Wai Ng, Wen-Jun Zhang, Sai-Wing Tsang, Chun-Sing Lee; Effects of graphene defect on electronic structures of its interface with organic semiconductor. Appl. Phys. Lett. 30 March 2015; 106 (13): 133502. https://doi.org/10.1063/1.4916736
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