We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes.
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9 March 2015
Research Article|
March 12 2015
Narrow-line self-assembled GaAs quantum dots for plasmonics
Hongyi Zhang;
Hongyi Zhang
1
Institute for Integrative Nanosciences
, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
2
Max Planck Institute for Solid State Research
, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
3Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,
Institute of Semiconductors
, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
44th Physics Institute and Research Center SCOPE,
University of Stuttgart
, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Yongheng Huo
;
Yongheng Huo
1
Institute for Integrative Nanosciences
, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
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Klas Lindfors;
Klas Lindfors
a)
2
Max Planck Institute for Solid State Research
, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
44th Physics Institute and Research Center SCOPE,
University of Stuttgart
, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
5Department of Chemistry,
University of Cologne
, Luxemburger Strasse 116, D-50939 Köln, Germany
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Yonghai Chen;
Yonghai Chen
3Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,
Institute of Semiconductors
, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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Oliver G. Schmidt;
Oliver G. Schmidt
1
Institute for Integrative Nanosciences
, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
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Armando Rastelli;
Armando Rastelli
1
Institute for Integrative Nanosciences
, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
6Institute of Semiconductor and Solid-State Physics,
Johannes Kepler University Linz
, Altenbergerstrasse 69, A-4040 Linz, Austria
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Markus Lippitz
Markus Lippitz
b)
2
Max Planck Institute for Solid State Research
, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
44th Physics Institute and Research Center SCOPE,
University of Stuttgart
, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
7Experimental Physics III,
University of Bayreuth
, Universitätsstrasse 30, D-95447 Bayreuth, Germany
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a)
Electronic mail: klas.lindfors@uni-koeln.de
b)
Electronic mail: markus.lippitz@uni-bayreuth.de
Appl. Phys. Lett. 106, 101110 (2015)
Article history
Received:
January 28 2015
Accepted:
February 25 2015
Citation
Hongyi Zhang, Yongheng Huo, Klas Lindfors, Yonghai Chen, Oliver G. Schmidt, Armando Rastelli, Markus Lippitz; Narrow-line self-assembled GaAs quantum dots for plasmonics. Appl. Phys. Lett. 9 March 2015; 106 (10): 101110. https://doi.org/10.1063/1.4914387
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