We report that thin films of a prototype topological insulator, Bi2Se3, can be epitaxially grown onto the (0001) surface of BaFe12O19 (BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi2Se3 thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi2Se3/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi2Se3/BaM interface.
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1 September 2014
Research Article|
September 05 2014
Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy
Wenmin Yang;
Wenmin Yang
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Shuo Yang;
Shuo Yang
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Qinghua Zhang;
Qinghua Zhang
2Department of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing,
Tsinghua University
, Beijing 100084, China
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Yang Xu;
Yang Xu
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Shipeng Shen;
Shipeng Shen
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Jian Liao;
Jian Liao
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Jing Teng;
Jing Teng
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Cewen Nan;
Cewen Nan
2Department of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing,
Tsinghua University
, Beijing 100084, China
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Lin Gu;
Lin Gu
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Young Sun;
Young Sun
a)
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Kehui Wu;
Kehui Wu
b)
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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Yongqing Li
Yongqing Li
c)
1Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics
, Chinese Academy of Sciences, Beijing 100190, China
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a)
Electronic mail: youngsun@iphy.ac.cn
b)
Electronic mail: khwu@iphy.ac.cn
c)
Electronic mail: yqli@iphy.ac.cn
Appl. Phys. Lett. 105, 092411 (2014)
Article history
Received:
July 09 2014
Accepted:
August 27 2014
Citation
Wenmin Yang, Shuo Yang, Qinghua Zhang, Yang Xu, Shipeng Shen, Jian Liao, Jing Teng, Cewen Nan, Lin Gu, Young Sun, Kehui Wu, Yongqing Li; Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy. Appl. Phys. Lett. 1 September 2014; 105 (9): 092411. https://doi.org/10.1063/1.4895073
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