We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2–3 and 3–4 V with resistance ratios of 6 × 104 and 3 × 109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.

1.
D. B.
Strukov
,
G. S.
Snider
,
D. R.
Stewart
, and
R. S.
Williams
,
Nature
453
(
7191
),
80
83
(
2008
).
2.
J. C.
Scott
and
L. D.
Bozano
,
Adv. Mater.
19
(
11
),
1452
1463
(
2007
).
3.
J. J.
Yang
,
M. D.
Pickett
,
X. M.
Li
,
D. A. A.
Ohlberg
,
D. R.
Stewart
, and
R. S.
Williams
,
Nat. Nanotechnol.
3
(
7
),
429
433
(
2008
).
4.
A. V.
Kolobov
and
S. R.
Elliott
,
Adv. Phys.
40
(
5
),
625
684
(
1991
).
5.
R.
Waser
,
R.
Dittmann
,
G.
Staikov
, and
K.
Szot
,
Adv. Mater.
21
(
25–26
),
2632
2663
(
2009
).
6.
S.
Kim
,
J.
Park
,
S.
Jung
,
W.
Lee
,
J.
Woo
,
C.
Cho
,
M.
Siddik
,
J.
Shin
,
S.
Park
,
B. H.
Lee
, and
H.
Hwang
,
Appl. Phys. Lett.
99
(
19
),
192110
(
2011
).
7.
A.
Pradel
,
N.
Frolet
,
M.
Ramonda
,
A.
Piarristeguy
, and
M.
Ribes
,
Phys. Status Solidi A
208
(
10
),
2303
2308
(
2011
).
8.
Y.
Hirose
and
H.
Hirose
,
J. Appl. Phys.
47
(
6
),
2767
2772
(
1976
).
9.
D.
Reso
,
M.
Silinskas
,
M.
Lisker
,
A.
Schubert
, and
E. P.
Burte
,
Appl. Phys. Lett.
98
(
15
),
151901
(
2011
).
10.
R.
Soni
,
P.
Meuffels
,
A.
Petraru
,
M.
Weides
,
C.
Kugeler
,
R.
Waser
, and
H.
Kohlstedt
,
J. Appl. Phys.
107
(
2
),
024517
(
2010
).
11.
S.-J.
Choi
,
G.-S.
Park
,
K.-H.
Kim
,
S.
Cho
,
W.-Y.
Yang
,
X.-S.
Li
,
J.-H.
Moon
,
K.-J.
Lee
, and
K.
Kim
,
Adv. Mater.
23
(
29
),
3272
3277
(
2011
).
12.
F.
Wang
,
W. P.
Dunn
,
M.
Jain
,
C. De
Leo
, and
N.
Vickers
,
Solid-State Electron.
61
(
1
),
33
37
(
2011
).
13.
T.
Yoshimasu
,
M.
Akagi
,
N.
Tanba
, and
S.
Hara
,
IEEE J. Solid-State Circuit
33
(
9
),
1290
1296
(
1998
).
14.
Y. C.
Yang
,
F.
Pan
,
Q.
Liu
,
M.
Liu
, and
F.
Zeng
,
Nano Lett.
9
(
4
),
1636
1643
(
2009
).
15.
M. J.
Lee
,
Y.
Park
,
D. S.
Suh
,
E. H.
Lee
,
S.
Seo
,
D. C.
Kim
,
R.
Jung
,
B. S.
Kang
,
S. E.
Ahn
,
C. B.
Lee
,
D. H.
Seo
,
Y. K.
Cha
,
I. K.
Yoo
,
J. S.
Kim
, and
B. H.
Park
,
Adv. Mater.
19
(
22
),
3919
3923
(
2007
).
16.
A.
Mehonic
,
S.
Cueff
,
M.
Wojdak
,
S.
Hudziak
,
O.
Jambois
,
C.
Labbé
,
B.
Garrido
,
R.
Rizk
, and
A. J.
Kenyon
,
J. Appl. Phys.
111
(
7
),
074507
(
2012
).
17.
Y.
Li
,
Y. P.
Zhong
,
L.
Xu
,
J. J.
Zhang
,
X. H.
Xu
,
H. J.
Sun
, and
X. S.
Miao
,
Sci. Rep.
3
,
1619
(
2013
).
18.
M. A.
Hughes
,
R. M.
Gwilliam
,
K.
Homewood
,
B.
Gholipour
,
D. W.
Hewak
,
T.-H.
Lee
,
S. R.
Elliott
,
T.
Suzuki
,
Y.
Ohishi
,
T.
Kohoutek
, and
R. J.
Curry
,
Opt. Express
21
(
7
),
8101
8115
(
2013
).
19.
M. A.
Hughes
,
K. P.
Homewood
,
R. J.
Curry
,
Y.
Ohno
, and
T.
Mizutani
,
Appl. Phys. Lett.
103
(
13
),
133508
(
2013
).
20.
S. J.
Hinder
,
C.
Lowe
, and
J. F.
Watts
,
Surf. Interface Anal.
39
(
6
),
467
475
(
2007
).
21.
W. K.
Njoroge
,
H.-W.
Wöltgens
, and
M.
Wuttig
,
J. Vac. Sci. Technol. A
20
(
1
),
230
233
(
2002
).
22.
C.
Ohly
,
S.
Hoffmann-Eifert
,
X.
Guo
,
J.
Schubert
, and
R.
Waser
,
J. Am. Ceram. Soc.
89
(
9
),
2845
2852
(
2006
).
23.
K.
Shibuya
,
R.
Dittmann
,
S.
Mi
, and
R.
Waser
,
Adv. Mater.
22
(
3
),
411
414
(
2010
).
24.
C. G.
Zoski
,
Handbook of Electrochemistry
(
Elsevier
,
2007
).
You do not currently have access to this content.