We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2–3 and 3–4 V with resistance ratios of 6 × 104 and 3 × 109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.
Ion-implantation-enhanced chalcogenide-glass resistive-switching devices
Mark A. Hughes, Yanina Fedorenko, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Behrad Gholipour, Daniel W. Hewak, Tae-Hoon Lee, Stephen R. Elliott, Richard J. Curry; Ion-implantation-enhanced chalcogenide-glass resistive-switching devices. Appl. Phys. Lett. 25 August 2014; 105 (8): 083506. https://doi.org/10.1063/1.4894245
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