The analysis of quantum mechanical confinement in recent germanium electron–hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that constitutes the operating principle of these devices. The vertical electric field that appears across the intrinsic semiconductor to give rise to the bilayer configuration makes the formerly continuous conduction and valence bands become a discrete set of energy subbands, therefore increasing the effective bandgap close to the gates and reducing the BTBT probabilities. In this letter, we present a simulation approach that shows how the inclusion of quantum confinement and the subsequent modification of the band profile results in the appearance of lateral tunneling to the underlap regions that greatly degrades the subthreshold swing of these devices. To overcome this drawback imposed by confinement, we propose an heterogate configuration that proves to suppress this parasitic tunneling and enhances the device performance.

1.
Y.
Khatami
and
K.
Banerjee
,
IEEE Trans. Electron Devices
56
,
2752
(
2009
).
2.
R.
Gandhi
,
Z.
Chen
,
N.
Singh
,
K.
Banerjee
, and
S.
Lee
,
IEEE Electron Device Lett.
32
,
437
(
2011
).
3.
R.
Asra
,
M.
Shrivastava
,
K. V. R. M.
Murali
,
R. K.
Pandey
,
H.
Gossner
, and
V. R.
Rao
,
IEEE Trans. Electon Devices
58
,
1855
(
2011
).
4.
L. De
Michielis
,
L.
Lattanzio
,
P.
Palestri
,
L.
Selmi
, and
A. M.
Ionescu
, in
69th Annual IEEE Device Research Conference
(
IEEE
,
2011
), pp.
111
112
.
5.
K.
Boucart
and
A. M.
Ionescu
,
IEEE Trans. Electron Devices
54
,
1725
(
2007
).
6.
J. L.
Padilla
,
F.
Gamiz
, and
A.
Godoy
,
Appl. Phys. Lett.
103
,
112105
(
2013
).
7.
Y.
Lu
,
G.
Zhou
,
R.
Li
,
Q.
Liu
,
Q.
Zhang
,
T.
Vasen
,
S. D.
Chae
,
T.
Kosel
,
M.
Wistey
,
H.
Xing
,
A.
Seabaugh
, and
P.
Fay
,
IEEE Electron Device Lett.
33
,
655
(
2012
).
8.
L.
Lattanzio
,
L. De
Michielis
, and
A. M.
Ionescu
,
Solid-State Electron.
74
,
85
(
2012
).
9.
S.
Agarwal
and
E.
Yablonovitch
, in
IEEE 69th Annual Device Research Conference
(
IEEE
,
2011
), pp.
199
200
.
10.
L.
Lattanzio
,
L. De
Michielis
, and
A. M.
Ionescu
,
IEEE Electron Device Lett.
33
,
167
(
2012
).
11.
C.
Alper
,
L.
Lattanzio
,
L. De
Michielis
,
P.
Palestri
,
L.
Selmi
, and
A.
Ionescu
,
IEEE Trans Electron Devices
60
,
2754
(
2013
).
12.
Silvaco, ATLAS users manual, February
2014
.
13.
Synopsys, Sentaurus Device Tool Manual, December
2013
.
14.
J. L.
Padilla
,
F.
Gamiz
, and
A.
Godoy
,
IEEE Electron Device Lett.
33
,
1342
(
2012
).
15.
A. M.
Walke
,
A. S.
Verhulst
,
A.
Vandooren
,
D.
Verreck
,
E.
Simoen
,
V. R.
Rao
,
G.
Groeseneken
,
N.
Collaert
, and
A. V. Y.
Thean
,
IEEE Trans. Electron Devices
60
,
4057
(
2013
).
16.
K.-H.
Kao
,
A. S.
Verhulst
,
W. G.
Vandenberghe
,
B.
Sorée
,
G.
Groeseneken
, and
K. D.
Meyer
,
IEEE Trans. Electron Devices
59
,
292
(
2012
).
17.
J. T.
Teherani
,
S.
Agarwal
,
E.
Yablonovitch
,
J. L.
Hoyt
, and
D. A.
Antoniadis
,
IEEE Electron Device Lett.
34
,
298
(
2013
).
18.
W.
Choi
and
W.
Lee
,
IEEE Trans. Electron Devices
57
,
2317
(
2010
).
19.
C.
Alper
,
L. De
Michielis
,
N.
Dagtekin
,
L.
Lattanzio
, and
A. M.
Ionescu
, in
ESSDERC Conference
(IEEE,
2012
), pp.
161
164
.
You do not currently have access to this content.