Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power.
High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction
Longxing Su, Quanlin Zhang, Tianzhun Wu, Mingming Chen, Yuquan Su, Yuan Zhu, Rong Xiang, Xuchun Gui, Zikang Tang; High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction. Appl. Phys. Lett. 18 August 2014; 105 (7): 072106. https://doi.org/10.1063/1.4893591
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