Ferroelectric field-effect transistors based on multi-walled carbon nanotube micron-wide stripe arrays Available to Purchase

Ferroelectric field-effect transistors (FeFETs) with multiwall carbon nanotube (MWCNT) micron-wide stripe arrays as channel and (Bi,Nd)₄Ti₃O₁₂ films as insulator were developed and fabricated. The prepared stripe arrays MWCNT-FeFETs possess excellent properties such as large “on” current, high I_on/I_off ratio, high channel carrier mobility, and wide memory window. These good performances are mainly attributed to the use of the MWCNT micron-wide stripe arrays channel. The spaces between MWCNT stripes can inhibit the function of the mixed metallic nanotubes in MWCNTs and, thus, improve the semiconductor property of channel layer, and sequentially improve the I_on/I_off ratio. In addition, the stripe arrays and CNTs within stripes have very high density; therefore, the metallic nanotubes within stripes can transfer many carriers and, thereby, display large “on” current and high channel carrier mobility.