A Ni-Mn-Ga single crystal with a modulated five-layered martensite structure is reported, demonstrating giant magnetic field induced strain (MFIS) of 7.1% at room temperature and of 6% at temperatures close to the austenite transformation (TA = 71 °C). The room temperature MFIS clearly exceeds the best results of around 6% measured earlier in 10M martensites. The larger MFIS is connected to the huge (>1%) change in the lattice distortion of the 10M structure, obtained within a narrow temperature interval of 47 K, which has been previously observed only during intermartensitic transformation. The present material shall effectively reduce the size of magnetic shape memory actuators.
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Research Article| August 05 2014
Over 7% magnetic field-induced strain in a Ni-Mn-Ga five-layered martensite
M. J. Szczerba;
E. Pagounis, R. Chulist, M. J. Szczerba, M. Laufenberg; Over 7% magnetic field-induced strain in a Ni-Mn-Ga five-layered martensite. Appl. Phys. Lett. 4 August 2014; 105 (5): 052405. https://doi.org/10.1063/1.4892633
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