We report a molecular beam epitaxial growth of Na3Bi single-crystal thin films on two different substrates—epitaxial bilayer graphene terminated 6H-SiC(0001) and Si(111). Using reflection high-energy electron diffraction, we found that the lattice orientation of the grown Na3Bi thin film was rotated by 30° respect to the surface lattice orientations of these two substrates. An in-situ angle-resolved photoemission spectroscopy clearly revealed the 3-dimensional Dirac-cone band structure in such thin films. Our approach of growing Na3Bi thin film provides a potential route for further studying its intriguing electronic properties and for fabricating it into practical devices in future.
Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na3Bi
Yi Zhang, Zhongkai Liu, Bo Zhou, Yeongkwan Kim, Zahid Hussain, Zhi-Xun Shen, Yulin Chen, Sung-Kwan Mo; Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na3Bi. Appl. Phys. Lett. 21 July 2014; 105 (3): 031901. https://doi.org/10.1063/1.4890940
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