GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by atom probe tomography (APT). The study allows us to confirm that Al atoms tend to segregate within the AlGaAs shells towards the vertices of the hexagons defining the nanowire cross section. We also find strong alloy fluctuations remaining AlGaAs shell, leading occasionally to the formation of quantum dots (QDs). The PL emission energies predicted in the framework of a 3D effective mass model for a QD analyzed by APT and the PL spectra measured on other nanowires from the same growth batch are consistent within the experimental uncertainties.
Skip Nav Destination
Article navigation
15 December 2014
Research Article|
December 17 2014
Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires
L. Mancini
;
L. Mancini
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
Search for other works by this author on:
Y. Fontana;
Y. Fontana
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Search for other works by this author on:
S. Conesa-Boj;
S. Conesa-Boj
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Search for other works by this author on:
I. Blum;
I. Blum
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
Search for other works by this author on:
F. Vurpillot;
F. Vurpillot
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
Search for other works by this author on:
L. Francaviglia
;
L. Francaviglia
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Search for other works by this author on:
E. Russo-Averchi;
E. Russo-Averchi
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Search for other works by this author on:
M. Heiss;
M. Heiss
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Search for other works by this author on:
J. Arbiol;
J. Arbiol
3
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
, Campus de la UAB, 08193 Bellaterra, CAT, Spain
4
Institució Catalana de Recerca i Estudis Avançats (ICREA)
, 08010 Barcelona, CAT, Spain
Search for other works by this author on:
A. Fontcuberta i Morral
;
A. Fontcuberta i Morral
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Search for other works by this author on:
L. Rigutti
L. Rigutti
a)
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
Search for other works by this author on:
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 105, 243106 (2014)
Article history
Received:
November 20 2014
Accepted:
December 07 2014
Citation
L. Mancini, Y. Fontana, S. Conesa-Boj, I. Blum, F. Vurpillot, L. Francaviglia, E. Russo-Averchi, M. Heiss, J. Arbiol, A. Fontcuberta i Morral, L. Rigutti; Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires. Appl. Phys. Lett. 15 December 2014; 105 (24): 243106. https://doi.org/10.1063/1.4904952
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Piezoelectric phononic integrated circuits
Krishna C. Balram
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Related Content
Atomic scale investigations on CdxZn1−xSe quantum dots: Correlation between the composition and emission properties
Appl. Phys. Lett. (August 2014)
Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy
Appl. Phys. Lett. (September 2013)
Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters
Appl. Phys. Lett. (June 2012)
Surround-gated vertical nanowire quantum dots
Appl. Phys. Lett. (June 2010)
Position-controlled [100] InP nanowire arrays
Appl. Phys. Lett. (January 2012)