GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by atom probe tomography (APT). The study allows us to confirm that Al atoms tend to segregate within the AlGaAs shells towards the vertices of the hexagons defining the nanowire cross section. We also find strong alloy fluctuations remaining AlGaAs shell, leading occasionally to the formation of quantum dots (QDs). The PL emission energies predicted in the framework of a 3D effective mass model for a QD analyzed by APT and the PL spectra measured on other nanowires from the same growth batch are consistent within the experimental uncertainties.
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15 December 2014
Research Article|
December 17 2014
Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires
L. Mancini
;
L. Mancini
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
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Y. Fontana;
Y. Fontana
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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S. Conesa-Boj;
S. Conesa-Boj
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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I. Blum;
I. Blum
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
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F. Vurpillot;
F. Vurpillot
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
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L. Francaviglia
;
L. Francaviglia
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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E. Russo-Averchi;
E. Russo-Averchi
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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M. Heiss;
M. Heiss
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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J. Arbiol;
J. Arbiol
3
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
, Campus de la UAB, 08193 Bellaterra, CAT, Spain
4
Institució Catalana de Recerca i Estudis Avançats (ICREA)
, 08010 Barcelona, CAT, Spain
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A. Fontcuberta i Morral
;
A. Fontcuberta i Morral
2
Laboratoire des Matériaux Semiconducteurs
, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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L. Rigutti
L. Rigutti
a)
1Groupe de Physique des Matériaux, UMR CNRS 6634,
University and INSA of Rouen, Normandie University
, 76800 St. Etienne du Rouvray, France
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a)
Author to whom correspondence should be addressed. Electronic mail: lorenzo.rigutti@univ-rouen.fr
Appl. Phys. Lett. 105, 243106 (2014)
Article history
Received:
November 20 2014
Accepted:
December 07 2014
Citation
L. Mancini, Y. Fontana, S. Conesa-Boj, I. Blum, F. Vurpillot, L. Francaviglia, E. Russo-Averchi, M. Heiss, J. Arbiol, A. Fontcuberta i Morral, L. Rigutti; Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires. Appl. Phys. Lett. 15 December 2014; 105 (24): 243106. https://doi.org/10.1063/1.4904952
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