The nucleation and the evolution of dislocations in SiGe/Si(001) films can be controlled and confined along stripes aligned along pits carved in the substrate, leaving micrometric coherent areas free of dislocations. In this work, we have addressed the stability of such metastable areas versus, film thickness, different Ge contents (xGe = 10%–30%) and larger pit-pattern periods, revealing the flexibility and effectiveness of this method even for coherent areas of about 64 μm2. The thermal stability of such configuration has been finally verified by post-growth annealing treatment, in order to simulate device processing. Finally, μRaman spectroscopy and X-ray nanodiffraction have been used to characterize the periodic strain variations across the pattern.
Skip Nav Destination
Article navigation
15 December 2014
Research Article|
December 15 2014
Strain release management in SiGe/Si films by substrate patterning
V. Mondiali;
V. Mondiali
1
L-NESS
, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100 Como, Italy
Search for other works by this author on:
M. Bollani;
M. Bollani
a)
2
IFN-CNR
, L-NESS, via Anzani 42, 22100 Como, Italy
Search for other works by this author on:
D. Chrastina;
D. Chrastina
1
L-NESS
, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100 Como, Italy
Search for other works by this author on:
R. Rubert;
R. Rubert
1
L-NESS
, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100 Como, Italy
Search for other works by this author on:
G. Chahine;
G. Chahine
3
ID01/ESRF
, BP 220, F-38043 Grenoble Cedex, France
Search for other works by this author on:
M. I. Richard;
M. I. Richard
3
ID01/ESRF
, BP 220, F-38043 Grenoble Cedex, France
4
Aix-Marseille Universite
, CNRS, IM2NP UMR 7334, Campus de Saint Jerome, F-13397 Marseille Cedex, France
Search for other works by this author on:
S. Cecchi;
S. Cecchi
1
L-NESS
, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100 Como, Italy
Search for other works by this author on:
L. Gagliano;
L. Gagliano
5L-NESS and Department of Material Science,
University of Milano-Bicocca
, via Cozzi 55, I-20125 Milano, Italy
Search for other works by this author on:
E. Bonera;
E. Bonera
5L-NESS and Department of Material Science,
University of Milano-Bicocca
, via Cozzi 55, I-20125 Milano, Italy
Search for other works by this author on:
T. Schülli;
T. Schülli
3
ID01/ESRF
, BP 220, F-38043 Grenoble Cedex, France
Search for other works by this author on:
L. Miglio
L. Miglio
5L-NESS and Department of Material Science,
University of Milano-Bicocca
, via Cozzi 55, I-20125 Milano, Italy
Search for other works by this author on:
a)
Electronic mail: [email protected]
Appl. Phys. Lett. 105, 242103 (2014)
Article history
Received:
November 14 2014
Accepted:
December 02 2014
Citation
V. Mondiali, M. Bollani, D. Chrastina, R. Rubert, G. Chahine, M. I. Richard, S. Cecchi, L. Gagliano, E. Bonera, T. Schülli, L. Miglio; Strain release management in SiGe/Si films by substrate patterning. Appl. Phys. Lett. 15 December 2014; 105 (24): 242103. https://doi.org/10.1063/1.4904455
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Related Content
Lithographically defined low dimensional SiGe nanostripes as silicon stressors
J. Appl. Phys. (November 2012)
Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction
Appl. Phys. Lett. (January 2014)
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures
Appl. Phys. Lett. (August 2015)
Spatially confined low-power optically pumped ultrafast synchrotron x-ray nanodiffraction
Rev. Sci. Instrum. (August 2015)
Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction
Appl. Phys. Lett. (March 2017)