We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.
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8 December 2014
Research Article|
December 08 2014
Reduction of skin effect losses in double-level-T-gate structure
M. Mikulics;
M. Mikulics
a)
1
Peter Grünberg Institute (PGI-9)
, Forschungszentrum Jülich, D-52425 Jülich, Germany
2
Jülich-Aachen Research Alliance
, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
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H. Hardtdegen
;
H. Hardtdegen
1
Peter Grünberg Institute (PGI-9)
, Forschungszentrum Jülich, D-52425 Jülich, Germany
2
Jülich-Aachen Research Alliance
, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
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Y. C. Arango;
Y. C. Arango
1
Peter Grünberg Institute (PGI-9)
, Forschungszentrum Jülich, D-52425 Jülich, Germany
2
Jülich-Aachen Research Alliance
, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
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R. Adam;
R. Adam
1
Peter Grünberg Institute (PGI-9)
, Forschungszentrum Jülich, D-52425 Jülich, Germany
2
Jülich-Aachen Research Alliance
, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
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A. Fox
;
A. Fox
1
Peter Grünberg Institute (PGI-9)
, Forschungszentrum Jülich, D-52425 Jülich, Germany
2
Jülich-Aachen Research Alliance
, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
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D. Grützmacher;
D. Grützmacher
1
Peter Grünberg Institute (PGI-9)
, Forschungszentrum Jülich, D-52425 Jülich, Germany
2
Jülich-Aachen Research Alliance
, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
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D. Gregušová
;
D. Gregušová
3
Institute of Electrical Engineering
, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic
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S. Stanček;
S. Stanček
4Department of Nuclear Physic and Technique,
Slovak University of Technology
, SK-81219 Bratislava, Slovak Republic
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J. Novák;
J. Novák
3
Institute of Electrical Engineering
, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic
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P. Kordoš;
P. Kordoš
5Institute of Electronics and Photonics,
Slovak University of Technology
, SK-81219 Bratislava, Slovak Republic
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Z. Sofer;
Z. Sofer
6Department of Inorganic Chemistry,
Institute of Chemical Technology
, Technická 5, Prague 6, Czech Republic
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L. Juul;
L. Juul
7Faculté des Sciences, de la Technologie et de la Communication,
Université du Luxembourg
, L-1359 Luxembourg, Luxembourg
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M. Marso
M. Marso
7Faculté des Sciences, de la Technologie et de la Communication,
Université du Luxembourg
, L-1359 Luxembourg, Luxembourg
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a)
Author to whom correspondence should be addressed. Electronic mail: m.mikulics@fz-juelich.de.
Appl. Phys. Lett. 105, 232102 (2014)
Article history
Received:
September 23 2014
Accepted:
November 18 2014
Citation
M. Mikulics, H. Hardtdegen, Y. C. Arango, R. Adam, A. Fox, D. Grützmacher, D. Gregušová, S. Stanček, J. Novák, P. Kordoš, Z. Sofer, L. Juul, M. Marso; Reduction of skin effect losses in double-level-T-gate structure. Appl. Phys. Lett. 8 December 2014; 105 (23): 232102. https://doi.org/10.1063/1.4903468
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