We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al2O3/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al2O3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al2O3 valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.
Skip Nav Destination
,
,
,
,
,
,
,
,
,
,
,
Article navigation
24 November 2014
Research Article|
November 24 2014
Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions
Wei Li
;
Wei Li
a)
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
2
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics
, Peking University
, Beijing 100871, China
Search for other works by this author on:
Qin Zhang;
Qin Zhang
a)
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
Search for other works by this author on:
R. Bijesh;
R. Bijesh
3
Department of Electrical Engineering
, The Pennsylvania State University
, University Park
, Pennsylvania 16802, USA
Search for other works by this author on:
Oleg A. Kirillov;
Oleg A. Kirillov
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
Search for other works by this author on:
Yiran Liang;
Yiran Liang
2
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics
, Peking University
, Beijing 100871, China
Search for other works by this author on:
Igor Levin;
Igor Levin
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
Search for other works by this author on:
Lian-Mao Peng;
Lian-Mao Peng
2
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics
, Peking University
, Beijing 100871, China
Search for other works by this author on:
Curt A. Richter;
Curt A. Richter
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
Search for other works by this author on:
Xuelei Liang;
Xuelei Liang
b)
2
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics
, Peking University
, Beijing 100871, China
Search for other works by this author on:
S. Datta;
S. Datta
3
Department of Electrical Engineering
, The Pennsylvania State University
, University Park
, Pennsylvania 16802, USA
Search for other works by this author on:
David J. Gundlach;
David J. Gundlach
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
Search for other works by this author on:
N. V. Nguyen
N. V. Nguyen
b)
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
Search for other works by this author on:
Wei Li
1,2,a)
Qin Zhang
1,a)
R. Bijesh
3
Oleg A. Kirillov
1
Yiran Liang
2
Igor Levin
1
Lian-Mao Peng
2
Curt A. Richter
1
Xuelei Liang
2,b)
S. Datta
3
David J. Gundlach
1
N. V. Nguyen
1,b)
1
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
2
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics
, Peking University
, Beijing 100871, China
3
Department of Electrical Engineering
, The Pennsylvania State University
, University Park
, Pennsylvania 16802, USA
a)
W. Li and Q. Zhang contributed equally to this work.
b)
Author to whom correspondence should be addressed. Electronic addresses: [email protected] and [email protected]
Appl. Phys. Lett. 105, 213501 (2014)
Article history
Received:
October 03 2014
Accepted:
November 10 2014
Citation
Wei Li, Qin Zhang, R. Bijesh, Oleg A. Kirillov, Yiran Liang, Igor Levin, Lian-Mao Peng, Curt A. Richter, Xuelei Liang, S. Datta, David J. Gundlach, N. V. Nguyen; Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions. Appl. Phys. Lett. 24 November 2014; 105 (21): 213501. https://doi.org/10.1063/1.4902418
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Related Content
A unique photoemission method to measure semiconductor heterojunction band offsets
Appl. Phys. Lett. (January 2013)
Composition dependence of band alignments in G a x I n 1 − x A s y S b 1 − y heterojunctions lattice matched to GaSb and InAs
J. Appl. Phys. (November 2013)
Band offsets determination and interfacial chemical properties of the Al 2 O 3 / GaSb system
Appl. Phys. Lett. (October 2010)
Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. (January 2017)
Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
J. Appl. Phys. (January 2014)