We report on the simple fabrication of highly efficient solution-processable, flexible graphene-based field emission (FE) cathodes via direct laser writing of emitting pixels on reduced graphene oxide (rGO) films deposited onto rGO:poly(3-hexylthiophene) (P3HT) composite layers. Laser processing gives rise to a pronounced vertical alignment of rGO bundles perpendicular to the substrate, while at the same time sharp graphene edges are protruding out of the bundle. The laser-fabricated cathodes exhibit outstanding FE properties with a turn-on field of as low as ∼0.6 V/μm and a field enhancement factor of 8900, which are the best reported to date for rGO FE cathodes. At the same time, the cathodes exhibit stable operation under extensive and repetitive bending, a critical requirement for every flexible technology. The flexible and solution-processable, graphene-based, technology developed could be useful for diverse potential applications including field emission displays, biochemical sensors as well as solar cell and battery electrodes.
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17 November 2014
Research Article|
November 19 2014
Direct laser writing of flexible graphene field emitters
Georgios Viskadouros
;
Georgios Viskadouros
1Center of Materials Technology and Photonics and Electrical Engineering Department,
Technological Educational Institute (TEI) of Crete
, Heraklion 71004, Crete, Greece
2Department of Mineral Resources Engineering,
Technical University of Crete
, Chania 731 00, Crete, Greece
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Dimitrios Konios
;
Dimitrios Konios
1Center of Materials Technology and Photonics and Electrical Engineering Department,
Technological Educational Institute (TEI) of Crete
, Heraklion 71004, Crete, Greece
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Emmanuel Kymakis
;
Emmanuel Kymakis
a)
1Center of Materials Technology and Photonics and Electrical Engineering Department,
Technological Educational Institute (TEI) of Crete
, Heraklion 71004, Crete, Greece
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Emmanuel Stratakis
Emmanuel Stratakis
a)
1Center of Materials Technology and Photonics and Electrical Engineering Department,
Technological Educational Institute (TEI) of Crete
, Heraklion 71004, Crete, Greece
3
Institute of Electronic Structure and Laser
, Foundation for Research and Technology - Hellas, P. O. Box 1527, 711 10 Heraklion, Crete, Greece
4Department of Materials Science and Technology,
University of Crete
, Heraklion 710 03, Crete, Greece
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a)
Authors to whom correspondence should be addressed. Electronic addresses: kymakis@staff.teicrete.gr and stratak@iesl.forth.gr.
Appl. Phys. Lett. 105, 203104 (2014)
Article history
Received:
October 15 2014
Accepted:
November 08 2014
Citation
Georgios Viskadouros, Dimitrios Konios, Emmanuel Kymakis, Emmanuel Stratakis; Direct laser writing of flexible graphene field emitters. Appl. Phys. Lett. 17 November 2014; 105 (20): 203104. https://doi.org/10.1063/1.4902130
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