The degradation of ferroelectric (FE) properties of atomic layer deposited Hf0.5Zr0.5O2 films with increasing thickness was mitigated by inserting 1 nm-thick Al2O3 interlayer at middle position of the thickness of the FE film. The large Pr of 10 μC/cm2, which is 11 times larger than that of single layer Hf0.5Zr0.5O2 film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al2O3 interlayer could interrupt the continual growth of Hf0.5Zr0.5O2 films, and the resulting decrease of grain size prevented the formation of non-ferroelectric monoclinic phase. The Al2O3 interlayer also largely decreased the leakage current of the Hf0.5Zr0.5O2 films.
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See supplementary material at http://dx.doi.org/10.1063/1.4902072 for the plan-view scanning electron microscope images of Hf0.5Zr0.5O2 films and Hf0.5Zr0.5O2/Al2O3/Hf0.5Zr0.5O2 films with various thicknesses, for d-spacing values from (111)-planes of orthorhombic phase of HfO2, ZrO2, and Hf0.5Zr0.5O2 films from various studies, pulse switching test results, and endurance test results of Hf0.5Zr0.5O2 films and Hf0.5Zr0.5O2/Al2O3/Hf0.5Zr0.5O2 films with various thicknesses.
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