The electron spin dynamics in n-doped bulk cubic GaN is investigated for very high temperatures from 293 K up to 500 K by time-resolved Kerr-rotation spectroscopy. We find extraordinarily long spin lifetimes exceeding 1 ns at 500 K. The temperature dependence of the spin relaxation time is in qualitative agreement with predictions of Dyakonov-Perel theory, while the absolute experimental times are an order of magnitude shorter than predicted. Possible reasons for this discrepancy are discussed, including the role of phase mixtures of hexagonal and cubic GaN as well as the impact of localized carriers.
References
1.
Semiconductor Spintronics and Quantum Computation
, edited by D. D.
Awschalom
and N.
Samarth
(Springer-Verlag
, Berlin
, 2002
).2.
S.
Sugahara
and J.
Nitta
, Proc. IEEE
98
, 2124
(2010
).3.
M.
Holub
, J.
Shin
, D.
Saha
, and P.
Bhattacharya
, Phys. Rev. Lett.
98
, 146603
(2007
).4.
Y.
Ohno
, R.
Terauchi
, T.
Adachi
, F.
Matsukura
, and H.
Ohno
, Phys. Rev. Lett.
83
, 4196
(1999
).5.
M.
Paillard
, X.
Marie
, P.
Renucci
, T.
Amand
, A.
Jbeli
, and J. M.
Gérard
, Phys. Rev. Lett.
86
, 1634
(2001
).6.
M. I.
Dyakonov
and V. I.
Perel
, Sov. Phys. Solid State
13
, 3023
(1972
).7.
J. H.
Jiang
and M. W.
Wu
, Phys. Rev. B
79
, 125206
(2009
).8.
Optical Orientation
, edited by F.
Meier
and B. P.
Zakharchenya
(North-Holland
, Amsterdam
, 1984
).9.
J. H.
Buß
, J.
Rudolph
, F.
Natali
, F.
Semond
, and D.
Hägele
, Appl. Phys. Lett.
95
, 192107
(2009
).10.
J. H.
Buß
, J.
Rudolph
, F.
Natali
, F.
Semond
, and D.
Hägele
, Phys. Rev. B
81
, 155216
(2010
).11.
J. H.
Buß
, J.
Rudolph
, S.
Starosielec
, A.
Schaefer
, F.
Semond
, Y.
Cordier
, A. D.
Wieck
, and D.
Hägele
, Phys. Rev. B
84
, 153202
(2011
).12.
D. J.
As
, in III-Nitride Semiconductor Materials: Growth
, edited by M. O.
Manasreh
andI. T.
Ferguson
(Taylor and Francis
, New York
, 2003
);D. J.
As
, S.
Potthast
, J.
Schörmann
, S. F.
Li
, K.
Lischka
, H.
Nagasawa
, and M.
Abe
, Mater. Sci. Forum
527
, 1489
(2006
).13.
S.
Krishnamurthy
, M.
van Schilfgaarde
, and N.
Newman
, Appl. Phys. Lett.
83
, 1761
(2003
).14.
Z. G.
Yu
, S.
Krishnamurthy
, M.
van Schilfgaarde
, and N.
Newman
, Phys. Rev. B
71
, 245312
(2005
).15.
A.
Tackeuchi
, H.
Otake
, Y.
Ogawa
, T.
Ushiyama
, T.
Fujita
, F.
Takano
, and H.
Akinaga
, Appl. Phys. Lett.
88
, 162114
(2006
).16.
J. H.
Buß
, J.
Rudolph
, T.
Schupp
, D. J.
As
, K.
Lischka
, and D.
Hägele
, Appl. Phys. Lett.
97
, 062101
(2010
).17.
D.
Lagarde
, A.
Balocchi
, H.
Carrère
, P.
Renucci
, T.
Amand
, X.
Marie
, S.
Founta
, and H.
Mariette
, Phys. Rev. B
77
, 041304
(2008
).18.
S.
Oertel
, J.
Hübner
, and M.
Oestreich
, Appl. Phys. Lett.
93
, 132112
(2008
).19.
J. H.
Buß
, J.
Rudolph
, S.
Shvarkov
, H.
Hardtdegen
, A. D.
Wieck
, and D.
Hägele
, Appl. Phys. Lett.
102
, 192102
(2013
).20.
M. W.
Bayerl
, M. S.
Brandt
, T.
Graf
, O.
Ambacher
, J. A.
Majewski
, M.
Stutzmann
, D. J.
As
, and K.
Lischka
, Phys. Rev. B
63
, 165204
(2001
).21.
G.
Dresselhaus
, Phys. Rev.
100
, 580
(1955
).22.
D.
Hägele
, S.
Döhrmann
, J.
Rudolph
, and M.
Oestreich
, Adv. Solid State Phys.
45
, 253
(2005
).23.
B.
Pödör
, Phys. Status Solidi B
16
, K167
(1966
).24.
R. L.
Petritz
and W. W.
Scanlon
, Phys. Rev.
97
, 1620
(1955
).25.
J.
Bardeen
and W.
Shockley
, Phys. Rev.
80
, 72
(1950
).26.
D.
Chattopadhyay
and H. J.
Queisser
, Rev. Mod. Phys.
53
, 745
(1981
).27.
P. H.
Song
and K. W.
Kim
, Phys. Rev. B
66
, 035207
(2002
).28.
Material parameter used in the simulations: , a = 4.5 Å, TLO = 1065 K, ac = 2.77 eV, c11 = 296 GPa, c12 = 154 GPa, c44 = 206 GPa, and e14 = 0.5 C/m2.
29.
D. J.
As
and K.
Lischka
, in Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications
, edited by M.
Henini
(Elsevier
, Oxford
, 2013
).30.
D. J.
As
, D.
Schikora
, A.
Greiner
, M.
Lübbers
, J.
Mimkes
, and K.
Lischka
, Phys. Rev. B
54
, R11118
(1996
).31.
O.
Brandt
, in Group III Nitride Semiconductor Compounds
, edited by B.
Gil
(Clarendon Press
, Oxford
, 1998
).32.
M.
Kohno
, T.
Nakamura
, T.
Kataoka
, R.
Katayama
, and K.
Onabe
, Phys. Status Solidi C
5
, 1805
(2008
);J. N.
Kuznia
, J. W.
Yang
, Q. C.
Chen
, S.
Krishnankutty
, M. A.
Khan
, T.
George
, and J.
Frietas
, Appl. Phys. Lett.
65
, 2407
(1994
);H.
Okumura
, S.
Misawa
, T.
Okahisa
, and S.
Yoshida
, J. Cryst. Growth
136
, 361
(1994
);S. V.
Novikov
, N. M.
Stanton
, R. P.
Campion
, R. D.
Morris
, H. L.
Geen
, C. T.
Foxon
, and A. J.
Kent
, Semicond. Sci. Technol.
23
, 015018
(2008
).33.
K.
Shen
, J.
Fu
, and M.
Wu
, Solid State Commun.
151
, 1924
(2011
).34.
Here we corrected for several misprints in the English version of the corresponding section of Ref. 8, including the correct value of and inconsistent use of γ3.
35.
D.
Jena
, Phys. Rev. B
70
, 245203
(2004
).36.
See supplementary material in
J. J.
Krich
and B. I.
Halperin
, Phys. Rev. Lett.
98
, 226802
(2007
) for a compilation of theoretical and experimental values of γe for GaAs.37.
J. Y.
Fu
and M. W.
Wu
, J. Appl. Phys.
104
, 093712
(2008
).38.
R. M.
Kemper
, T.
Schupp
, M.
Häberlen
, T.
Niendorf
, H.-J.
Maier
, A.
Dempewolf
, F.
Bertram
, J.
Christen
, R.
Kirste
, A.
Hoffmann
, J.
Lindner
, and D. J.
As
, J. Appl. Phys.
110
, 123512
(2011
).39.
V. I.
Melnikov
and E. I.
Rashba
, Sov. Phys. JETP
34
, 1353
(1972
);E. Y.
Sherman
, Appl. Phys. Lett.
82
, 209
(2003
).40.
R.
Klann
, O.
Brandt
, H.
Yang
, H. T.
Grahn
, K.
Ploog
, and A.
Trampert
, Phys. Rev. B
52
, R11615
(1995
).41.
M. I.
Dyakonov
, V. A.
Marushchak
, V. I.
Perel
, and A. N.
Titkov
, Sov. Phys. JETP
63
, 655
(1986
).42.
M. W.
Wu
, J. H.
Jiang
, and M. Q.
Weng
, Phys. Rep.
493
, 61
(2010
).43.
G.
Wang
, C. R.
Zhu
, B. L.
Liu
, H.
Ye
, A.
Balocchi
, T.
Amand
, B.
Urbaszek
, H.
Yang
, and X.
Marie
, Phys. Rev. B
90
, 121202
(2014
).© 2014 AIP Publishing LLC.
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