The response of carbon-nanotube (CNT) transistors to large tensile strains has not been studied because of lack of stretchable devices. In this letter, we fabricate extremely stretchable single-wall CNT (SWCNT) conductive coatings on flexible and transparent elastomer substrates. We then measure the mechanical and electrical properties of the coatings and found excellent stretchability (Poisson ratio ≈ 0.31). The sheet resistances of the coatings remain largely unchanged under a large tensile strain. We then construct an active transistor on SWCNT thin films, which serve as active channel and electrodes, with polydimethylsiloxane thin film as the gate dielectric layer. The transistor exhibits excellent mechanical stability, showing no noticeable change (less than 5%) in electrical performance up to a large strain of 22.5%. The stretchable SWCNT thin-film transistor exhibits a current on–off ratio of ∼50 and field-effect mobility of ∼24 cm2 V−1 s−1, with 75% transmissivity in visible wavelength. We also found that on–off ratio increases with increased stretch strain, while mobility initially increases and then decreases with increased stretch strain.
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6 October 2014
Research Article|
October 07 2014
Extremely stretchable all-carbon-nanotube transistor on flexible and transparent substrates
Minggang Xia;
Minggang Xia
a)
1Laboratory of Nanostructure and Physics Properties, MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
2Department of Optical Information Science Technology, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
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Zhaofang Cheng;
Zhaofang Cheng
1Laboratory of Nanostructure and Physics Properties, MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
3Department of Applied Physics, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
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Jinyun Han;
Jinyun Han
1Laboratory of Nanostructure and Physics Properties, MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
3Department of Applied Physics, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
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Shengli Zhang
Shengli Zhang
1Laboratory of Nanostructure and Physics Properties, MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
3Department of Applied Physics, School of Science,
Xi'an Jiaotong University
, Shaanxi 710049, People's Republic of China
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a)
Author to whom correspondence should be addressed. Electronic mail: xiamg@mail.xjtu.edu.cn
Appl. Phys. Lett. 105, 143504 (2014)
Article history
Received:
July 07 2014
Accepted:
September 20 2014
Citation
Minggang Xia, Zhaofang Cheng, Jinyun Han, Shengli Zhang; Extremely stretchable all-carbon-nanotube transistor on flexible and transparent substrates. Appl. Phys. Lett. 6 October 2014; 105 (14): 143504. https://doi.org/10.1063/1.4897528
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