We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.
References
1.
J. A.
Rogers
, M. G.
Lagally
, and R. G.
Nuzzo
, Nature
477
(7362
), 45
(2011
).2.
Y.
Xia
, V.
Kalihari
, C. Daniel
Frisbie
, N. K.
Oh
, and J. A.
Rogers
, Appl. Phys. Lett.
90
(16
), 162106
(2007
);J. N.
Burghartz
, W.
Appel
, H. D.
Rempp
, and M.
Zimmermann
, IEEE Trans. Electron Devices
56
(2
), 321
(2009
);G. A.
Sevilla
, J. P.
Rojas
, H. M.
Fahad
, A. M.
Hussain
, R.
Ghanem
, C. E.
Smith
, and M. M.
Hussain
, Adv. Mater.
26
(18
), 2794
(2014
).
[PubMed]
3.
J.
Sun
, B.
Zhang
, and H. E.
Katz
, Adv. Funct. Mater.
21
(1
), 29
(2011
);J. N.
Tiwari
, J. Singh
Meena
, C.-S.
Wu
, R. N.
Tiwari
, M.-C.
Chu
, F.-C.
Chang
, and F.-H.
Ko
, ChemSusChem
3
(9
), 1051
(2010
);
[PubMed]
A.
Bag
, M. K.
Hota
, S.
Mallik
, and C. K.
Maiti
, Semicond. Sci. Technol.
28
(5
), 055002
(2013
).4.
Y.
Lee
, L.
Handong
, and S. J.
Fonash
, IEEE Electron Device Lett.
24
(1
), 19
(2003
);E.
Menard
, K. J.
Lee
, D.-Y.
Khang
, R. G.
Nuzzo
, and J. A.
Rogers
, Appl. Phys. Lett.
84
(26
), 5398
(2004
);E.
Menard
, R. G.
Nuzzo
, and J. A.
Rogers
, Appl. Phys. Lett.
86
(9
), 093507
(2005
);Z.-T.
Zhu
, E.
Menard
, K.
Hurley
, R. G.
Nuzzo
, and J. A.
Rogers
, Appl. Phys. Lett.
86
(13
), 133507
(2005
);S.
Mack
, M. A.
Meitl
, A. J.
Baca
, Z.-T.
Zhu
, and J. A.
Rogers
, Appl. Phys. Lett.
88
(21
), 213101
(2006
);S. A.
Stauth
and B. A.
Parviz
, Proc. Natl. Acad. Sci.
103
(38
), 13922
(2006
);H.-C.
Yuan
, J.
Shin
, G.
Qin
, L.
Sun
, P.
Bhattacharya
, M. G.
Lagally
, G. K.
Celler
, and Z.
Ma
, Appl. Phys. Lett.
94
(1
), 013102
(2009
).5.
D.
Shahrjerdi
and S. W.
Bedell
, Nano Lett.
13
(1
), 315
(2013
).6.
J. P.
Rojas
, G. T.
Sevilla
, and M. M.
Hussain
, Appl. Phys. Lett.
102
(6
), 064102
(2013
).7.
M. M.
Hussain
, C. E.
Smith
, H. Rusty
Harris
, C. D.
Young
, T.
Hsing-Huang
, and R.
Jammy
, IEEE Trans. Electron Devices
57
(3
), 626
(2010
).8.
D. S.
Jeon
and D. E.
Burk
, IEEE Trans. Electron Devices
36
(8
), 1456
(1989
).9.
J.
Colinge
, L.
Floyd
, A. J.
Quinn
, G.
Redmond
, J. C.
Alderman
, W.
Xiong
, C. R.
Cleavelin
, T.
Schulz
, K.
Schruefer
, G.
Knoblinger
, and P.
Patruno
, IEEE Electron Device Lett.
27
(3
), 172
(2006
).10.
J.
Kavalieros
, B.
Doyle
, S.
Datta
, G.
Dewey
, M.
Doczy
, B.
Jin
, D.
Lionberger
, M.
Metz
, W.
Rachmady
, M.
Radosavljevic
, U.
Shah
, N.
Zelick
, and R.
Chau
, Int. Symp. VLSI Technol.
2006
, 50
–51
.11.
D.
Rideau
, A.
Dray
, F.
Gilibert
, F.
Agut
, L.
Giguerre
, G.
Gouget
, M.
Minondo
, and A.
Juge
, in 2004 Int. Conf. on Microelectron. Test Struct.
2004
, 149
–154
.12.
M.
Lemme
, T.
Mollenhauer
, W.
Henschel
, T.
Wahlbrink
, H.
Gottlob
, J.
Efavi
, M.
Baus
, O.
Winkler
, B.
Spangenberg
, and H.
Kurz
, Proc. Eur. Solid-State Device Res.
2003
, 123
–126
.13.
T.
Hoffmann
, G.
Doornbos
, I.
Ferain
, N.
Collaert
, P.
Zimmerman
, M.
Goodwin
, R.
Rooyackers
, A.
Kottantharayil
, Y.
Yim
, A.
Dixit
, K. De
Meyer
, M.
Jurczak
, and S.
Biesemans
, IEEE Int. Electron Devices Meet.
2005
, 725
–728
.14.
G.
Ghibaudo
, Electron. Lett.
24
(9
), 543
(1988
).15.
© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
You do not currently have access to this content.
