We have studied the effect of Ga ion irradiation on the controllable hysteretic behavior of graphene field effect transistors fabricated on Si/SO2 substrates. The various densities of defects in graphene were monitored by Raman spectrum. It was found that the Dirac point shifted to the positive gate voltage constantly, while the hysteretic behavior was enhanced first and then weakened, with the dose of ion irradiation increasing. By contrasting the trap charges density induced by dopant and the total density of effective trap charges, it demonstrated that adsorbate doping was not the decisive factor that induced the hysteretic behavior. The tunneling between the defect sites induced by ion irradiation was also an important cause for the hysteresis.
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29 September 2014
Research Article|
September 30 2014
Manipulation of transport hysteresis on graphene field effect transistors with Ga ion irradiation
Quan Wang;
Quan Wang
a)
1School of Mechanical Engineering,
Jiangsu University
, Zhenjiang 212013, People's Republic of China
2
State Key Laboratory of Transducer Technology
, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Shuai Liu;
Shuai Liu
1School of Mechanical Engineering,
Jiangsu University
, Zhenjiang 212013, People's Republic of China
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Naifei Ren
Naifei Ren
1School of Mechanical Engineering,
Jiangsu University
, Zhenjiang 212013, People's Republic of China
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 105, 133506 (2014)
Article history
Received:
July 28 2014
Accepted:
September 22 2014
Citation
Quan Wang, Shuai Liu, Naifei Ren; Manipulation of transport hysteresis on graphene field effect transistors with Ga ion irradiation. Appl. Phys. Lett. 29 September 2014; 105 (13): 133506. https://doi.org/10.1063/1.4897005
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