Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In1−x−Gax−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.
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29 September 2014
Research Article|
September 30 2014
Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes
Jong-Hoon Kim;
Jong-Hoon Kim
1Department of Materials Science and Engineering,
Hongik University
, Seoul 121-791, South Korea
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Ki-Heon Lee;
Ki-Heon Lee
1Department of Materials Science and Engineering,
Hongik University
, Seoul 121-791, South Korea
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Dae-Yeon Jo;
Dae-Yeon Jo
1Department of Materials Science and Engineering,
Hongik University
, Seoul 121-791, South Korea
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Yangjin Lee;
Yangjin Lee
2Institute of Advanced Composite Materials,
Korea Institute of Science and Technology
, Jeonbuk 565-905, South Korea
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Jun Yeon Hwang;
Jun Yeon Hwang
2Institute of Advanced Composite Materials,
Korea Institute of Science and Technology
, Jeonbuk 565-905, South Korea
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Heesun Yang
Heesun Yang
a)
1Department of Materials Science and Engineering,
Hongik University
, Seoul 121-791, South Korea
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a)
Electronic mail: [email protected]
Appl. Phys. Lett. 105, 133104 (2014)
Article history
Received:
July 22 2014
Accepted:
September 14 2014
Citation
Jong-Hoon Kim, Ki-Heon Lee, Dae-Yeon Jo, Yangjin Lee, Jun Yeon Hwang, Heesun Yang; Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes. Appl. Phys. Lett. 29 September 2014; 105 (13): 133104. https://doi.org/10.1063/1.4896911
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