Magnetic exchange bias (EB) has been investigated on antiferromagnetic/ferrimagnetic heterostructures consisting of a stoichiometric UO2 film grown epitaxially on a LaAlO3 substrate and covered with highly textured Fe3O4 layers of variable thickness (tFe3O4 = 90–700 Å). EB values reaching ∼2.6 kOe were observed at lowest temperatures in UO2/Fe3O4 with the thinnest Fe3O4. Magnetization measurements demonstrate that a remarkably large exchange bias in UO2/Fe3O4 is present at temperatures higher than the bulk Néel temperature of UO2 (TN = 30.8 K). Our study reveals a complex nature of the effect: we suggest that it is provided both by strong exchange coupling between UO2 and Fe3O4 and by exchange biasing within magnetite (up to 25% of the total effect at 5 K in the UO2/Fe3O4 sample with the largest EB). The former can be caused by proximity effects of Fe3O4 on TN combined with a magnetic anisotropy of UO2, persisting above a continuous magnetic-ordering transformation. For magnetite, the results indicate the presence of pinned moments up to 120 K that correlates with the change in the easy magnetization axis of Fe3O4 across the Verwey transition.
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22 September 2014
Research Article|
September 25 2014
Exchange bias in UO2/Fe3O4 thin films above the Néel temperature of UO2
E. A. Tereshina;
E. A. Tereshina
a)
1
Institute of Physics ASCR
, Na Slovance 2, 18221 Prague, Czech Republic
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Z. Bao;
Z. Bao
2European Commission,
Joint Research Centre (JRC), Institute for Transuranium Elements (ITU)
, Postfach 2340, DE-76125 Karlsruhe, Germany
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L. Havela;
L. Havela
3Faculty of Mathematics and Physics,
Charles University
, Ke Karlovu 5, 12116 Prague, Czech Republic
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S. Daniš;
S. Daniš
3Faculty of Mathematics and Physics,
Charles University
, Ke Karlovu 5, 12116 Prague, Czech Republic
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C. Kuebel;
C. Kuebel
4
Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT)
, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
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T. Gouder;
T. Gouder
2European Commission,
Joint Research Centre (JRC), Institute for Transuranium Elements (ITU)
, Postfach 2340, DE-76125 Karlsruhe, Germany
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R. Caciuffo
R. Caciuffo
2European Commission,
Joint Research Centre (JRC), Institute for Transuranium Elements (ITU)
, Postfach 2340, DE-76125 Karlsruhe, Germany
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a)
E-mail: [email protected]
Appl. Phys. Lett. 105, 122405 (2014)
Article history
Received:
July 23 2014
Accepted:
September 15 2014
Citation
E. A. Tereshina, Z. Bao, L. Havela, S. Daniš, C. Kuebel, T. Gouder, R. Caciuffo; Exchange bias in UO2/Fe3O4 thin films above the Néel temperature of UO2. Appl. Phys. Lett. 22 September 2014; 105 (12): 122405. https://doi.org/10.1063/1.4896635
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