We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications.
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See supplemental material at http://dx.doi.org/10.1063/1.4895069 for the following: (a) Transfer characteristics showing gate hysteresis before and after PVDF-TrFE spin coating; (b)Transfer characteristics showing the Vth shift in gate bias stress tests; (c) Transfer characteristics of SWCNT FETs with Various annealing temperature of PVDF-TrFE; (d) Changes in the transfer characteristics of SWCNT FETs when exposed to various molecules with different dipole moments; and (e) Contact angle analysis of PVDF-TrFE film.
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