Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%–20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400 μm length, 7%–20% Si concentration) with three-dimensionally uniform Si profiles.
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8 September 2014
Research Article|
September 10 2014
Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth
Ryo Matsumura;
Ryo Matsumura
1Department of Electronics,
Kyushu University
, 744 Motooka, Fukuoka 819-0395, Japan
2
JSPS Research Fellow
, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan
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Ryusuke Kato;
Ryusuke Kato
1Department of Electronics,
Kyushu University
, 744 Motooka, Fukuoka 819-0395, Japan
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Taizoh Sadoh;
Taizoh Sadoh
1Department of Electronics,
Kyushu University
, 744 Motooka, Fukuoka 819-0395, Japan
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Masanobu Miyao
Masanobu Miyao
a)
1Department of Electronics,
Kyushu University
, 744 Motooka, Fukuoka 819-0395, Japan
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a)
Author to whom corresponding should be addressed. Electronic mail: [email protected]. Tel.: +81-92-802-3736. FAX: +81-92-802-3724.
Appl. Phys. Lett. 105, 102106 (2014)
Article history
Received:
June 30 2014
Accepted:
August 29 2014
Citation
Ryo Matsumura, Ryusuke Kato, Taizoh Sadoh, Masanobu Miyao; Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth. Appl. Phys. Lett. 8 September 2014; 105 (10): 102106. https://doi.org/10.1063/1.4895512
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