Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate.
Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)
E. Velez-Fort, A. Ouerghi, M. G. Silly, M. Eddrief, A. Shukla, F. Sirtti, M. Marangolo; Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001). Appl. Phys. Lett. 3 March 2014; 104 (9): 093109. https://doi.org/10.1063/1.4867348
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