The ferroelectric domain depinning in a polycrystalline BiFeO3 film is studied by a defect-mediated diffusion mechanism driven by a secondary re-oxidation anneal. The presence of defect complexes (oxygen-vacancy-associated dipoles) responsible for pinning is discussed from the current-voltage (I-V) characteristics of the film. Dissociation of these complexes by re-oxidation anneal produces the effective depinning of domains in the material. The released oxygen vacancies would be compensated at the re-oxidized state due to the valence change of Fe2+ to Fe3+. Improvement on domain mobility results in a larger contribution to ferroelectric switching, showing a room-temperature remanent polarization of 67 μC cm−2.
Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films
I. Bretos, R. Jiménez, C. Gutiérrez-Lázaro, I. Montero, M. L. Calzada; Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films. Appl. Phys. Lett. 3 March 2014; 104 (9): 092905. https://doi.org/10.1063/1.4867703
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