GaFeO3-type AlFeO3 is consisted of oxygen octahedra and tetrahedra containing Al and Fe ions and is known to have a non-centrosymmetric polar structure with space group Pna21. We tried to grow epitaxial GaFeO3-type AlFeO3 films on SrTiO3 (111) substrates by pulsed laser deposition technique. Both the atomic arrangement of close-packed and the atomic distance of the substrate surface played important roles in stabilizing GaFeO3-type AlFeO3 on the substrate. Piezoresponse force microscopy measurements clearly showed that GaFeO3-type AlFeO3 films have ferroelectricity at room temperature. In addition, AlFeO3 film also showed pinched-like hysteresis loop with TN ∼ 317 K.
Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate
Yosuke Hamasaki, Takao Shimizu, Hiroki Taniguchi, Tomoyasu Taniyama, Shintaro Yasui, Mitsuru Itoh; Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate. Appl. Phys. Lett. 24 February 2014; 104 (8): 082906. https://doi.org/10.1063/1.4866798
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