We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus the capability of tuning its residual stress within a large tensile range to fabricate microstrings with fundamental resonant frequencies (f0) of several hundred kHz and mechanical quality factors (Q) of over a million. The fabrication of the perfect-clamped string structures proceeds through simple silicon surface micromachining processes. The resulting f Q product in vacuum is equal or higher as compared to state-of-the-art amorphous silicon nitride microresonators. We demonstrate that as the residual epitaxial SiC stress is doubled, the f Q product for the fundamental mode of the strings shows a four-fold increase.
Microresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon
Atieh R. Kermany, George Brawley, Neeraj Mishra, Eoin Sheridan, Warwick P. Bowen, Francesca Iacopi; Microresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon. Appl. Phys. Lett. 24 February 2014; 104 (8): 081901. https://doi.org/10.1063/1.4866268
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