In this work, the origin of electron blocking effect of n-type Al0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.
On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
Zi-Hui Zhang, Yun Ji, Wei Liu, Swee Tiam Tan, Zabu Kyaw, Zhengang Ju, Xueliang Zhang, Namig Hasanov, Shunpeng Lu, Yiping Zhang, Binbin Zhu, Xiao Wei Sun, Hilmi Volkan Demir; On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer. Appl. Phys. Lett. 17 February 2014; 104 (7): 073511. https://doi.org/10.1063/1.4866041
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