Organic semiconductor of 9, 10-bis(phenylethynyl)anthracene (BPEA) single crystal ribbon with ultra-long length has been prepared by solution drop casting method, where the growth direction was controlled with the seed crystal. The BPEA single crystal ribbon based field-effect transistors show high hole mobility up to 3.2 cm2/V·s, and the inverters exhibited the highest gain of 92. The complex device such as 5-stage ring oscillator consisting of 10 transistors was also constructed on a single crystal ribbon. This straightforward methodology was applied to fabricate plastic transistors on the flexible substrate, showing high performance even after repeatedly bending of 300 times.
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