We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29–0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.
High performance bilayer-graphene terahertz detectors
Davide Spirito, Dominique Coquillat, Sergio L. De Bonis, Antonio Lombardo, Matteo Bruna, Andrea C. Ferrari, Vittorio Pellegrini, Alessandro Tredicucci, Wojciech Knap, Miriam S. Vitiello; High performance bilayer-graphene terahertz detectors. Appl. Phys. Lett. 10 February 2014; 104 (6): 061111. https://doi.org/10.1063/1.4864082
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