The (111)A-oriented GaSb films are two-dimensionally grown on the Si(111) substrate. We found that the insertion of a thin interface layer of InAs between GaSb and Si is very effective to obtain high-quality GaSb films. Using the GaSb/InAs/Si heterostructure, we have fabricated HfO2/GaSb metal-oxide-semiconductor (MOS) capacitors. The MOS capacitors show electrical characteristics comparable to those fabricated on GaSb(001) substrates, making itself suitable for realizing the integration of Sb-based MOS devices with Si substrates.

1.
S.
Takagi
,
T.
Tezuka
,
T.
Irisawa
,
S.
Nakaharai
,
T.
Numata
,
K.
Usuda
,
N.
Sugiyama
,
M.
Shichijo
,
R.
Nakane
, and
S.
Sugahara
,
Solid-State Electron.
51
,
526
(
2007
).
2.
S.
Takagi
,
T.
Iisawa
,
T.
Tezuka
,
T.
Numata
,
S.
Nakaharai
,
N.
Hirashita
,
Y.
Moriyama
,
K.
Usuda
,
E.
Toyoda
,
S.
Dissanayake
,
M.
Shichijo
,
R.
Nakane
,
S.
Sugahara
,
M.
Takenaka
, and
N.
Sugiyama
,
IEEE Trans. Electron Devices
55
,
21
(
2008
).
3.
A.
Ali
,
H. S.
Madan
,
A. P.
Kirk
,
D. A.
Zhao
,
D. A.
Mourey
,
M. K.
Hudait
,
R. M.
Wallace
,
T. N.
Jackson
,
B. R.
Bennett
,
J. B.
Boos
, and
S.
Datta
,
Appl. Phys. Lett.
97
,
143502
(
2010
).
4.
L. B.
Ruppalt
,
E. R.
Cleveland
,
J. G.
Champlain
,
S. M.
Prokes
,
J. B.
Boos
,
D.
Park
, and
B. R.
Bennett
,
Appl. Phys. Lett.
101
,
231601
(
2012
).
5.
D. M.
Zhernokletov
,
H.
Dong
,
B.
Brennan
,
M.
Yakimov
,
V.
Tokranov
,
S.
Oktyabrsky
,
J.
Kim
, and
R. M.
Wallace
,
Appl. Phys. Lett.
102
,
131602
(
2013
).
6.
P. S.
Dutta
,
H. L.
Bhat
, and
V.
Kumar
,
J. Appl. Phys.
81
,
5821
(
1997
).
7.
K.
Akahane
,
N.
Yamamoto
,
S.
Gozu
, and
N.
Ohtani
,
J. Cryst. Growth
264
,
21
(
2004
).
8.
K.
Akahane
,
N.
Yamamoto
,
S.
Gozu
,
A.
Ueta
, and
N.
Ohtani
,
J. Cryst. Growth
283
,
297
(
2005
).
9.
Y. H.
Kim
,
J. Y.
Lee
,
Y. G.
Noh
,
M. D.
Kim
,
S. M.
Cho
,
Y. J.
Kwon
, and
J. E.
Oh
,
Appl. Phys. Lett.
88
,
241907
(
2006
).
10.
Y.
Nakamura
,
T.
Miwa
, and
M.
Ichikawa
,
Nanotechnology
22
,
265301
(
2011
).
11.
S. Y.
Woo
,
S. H.
Vajargah
,
S. G.
Tavakoli
,
R. N.
Kleiman
, and
G. A.
Botton
,
J. Appl. Phys.
112
,
074306
(
2012
).
12.
A.
Ohtake
and
K.
Mitsuishi
,
J. Vac. Sci. Technol. B
29
,
031804
(
2011
).
13.
H.
Toyota
,
A.
Mikami
,
T.
Endoh
,
Y.
Jinbo
, and
N.
Uchitomi
,
Phys. Status Solidi C
8
,
269
(
2011
).
14.
H.
Toyota
,
A.
Okabe
,
T.
Endoh
,
Y.
Jinbo
, and
N.
Uchitomi
,
J. Cryst. Growth
378
,
129
(
2013
).
15.
16.
N.
Miyata
,
M.
Shigeno
,
Y.
Arimoto
, and
T.
Ito
,
J. Appl. Phys.
74
,
5275
(
1993
).
17.

We also performed growth experiments on the In-terminated Si(111) surface, and confirmed the island growth mode of GaSb.

18.
J. A.
Dura
,
A.
Vigliante
,
T. D.
Golding
, and
S. C.
Moss
,
J. Appl. Phys.
77
,
21
(
1995
).
19.
O.
Romanyuk
,
F.
Grosse
,
A.
Proessdorf
,
W.
Braun
, and
H.
Riechert
,
Phys. Rev. B
82
,
125315
(
2010
).
20.
M.
Walther
,
E.
Kapon
,
C.
Caneau
,
D. M.
Hwang
, and
L. M.
Schiavone
,
Appl. Phys. Lett.
62
,
2170
(
1993
).
21.

Although threading dislocations and stacking faults are hardly observed in TEM images, our atomic force microscopy observations showed that the density of threading screw dislocations is 8 × 107 cm−2.

22.
Y.
Okada
and
Y.
Tokumaru
,
J. Appl. Phys.
56
,
314
(
1984
).
23.
T. A.
Nilsen
,
M.
Breivik
,
G.
Myrvågnes
, and
B. O.
Fimland
,
J. Vac. Sci. Technol B
28
,
C3I17
(
2010
).
24.
J.
Hornstra
and
W. J.
Bartels
,
J. Cryst. Growth
44
,
513
(
1978
).
25.
K.
Miura
,
Y.
Iguchi
, and
Y.
Kawamura
,
J. Cryst. Growth
378
,
121
(
2013
).
26.
A.
Dimoulas
,
G.
Vellianitis
,
G.
Mavrou
,
E. K.
Evangelou
,
K.
Argyropoulos
, and
M.
Houssa
,
Microelectron. Eng.
80
,
34
(
2005
).
27.
N.
Miyata
,
Y.
Urabe
,
T.
Yasuda
, and
A.
Ohtake
,
Appl. Phys. Express
3
,
035701
(
2010
).
28.
Y.
Urabe
,
N.
Miyata
,
T.
Yasuda
,
H.
Yamada
,
M.
Hata
,
N.
Taoka
,
T.
Hoshii
,
M.
Takenaka
, and
S.
Takagi
,
2010 Int. Conf. on Solid State Devices and Materials
, Tokyo, Japan, (22–24 September
2010
), Extended Abstract pp.
37
38
.
You do not currently have access to this content.