The (111)A-oriented GaSb films are two-dimensionally grown on the Si(111) substrate. We found that the insertion of a thin interface layer of InAs between GaSb and Si is very effective to obtain high-quality GaSb films. Using the GaSb/InAs/Si heterostructure, we have fabricated HfO2/GaSb metal-oxide-semiconductor (MOS) capacitors. The MOS capacitors show electrical characteristics comparable to those fabricated on GaSb(001) substrates, making itself suitable for realizing the integration of Sb-based MOS devices with Si substrates.
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We also performed growth experiments on the In-terminated Si(111) surface, and confirmed the island growth mode of GaSb.
Although threading dislocations and stacking faults are hardly observed in TEM images, our atomic force microscopy observations showed that the density of threading screw dislocations is 8 × 107 cm−2.