We report the growth of in-plane GaN wires on silicon by metalorganic chemical vapor deposition. Triangular-shaped GaN microwires with semi-polar sidewalls are observed to grow on top of a GaN/Si template patterned with nano-porous SiO2. With a length-to-thickness ratio ∼200, the GaN wires are well aligned along the three equivalent directions. Micro-Raman measurements indicate negligible stress and a low defect density inside the wires. Stacking faults were found to be the only defect type in the GaN wire by cross-sectional transmission electron microscopy. The GaN wires exhibited high conductivity, and the resistivity was 20–30 mΩ cm, regardless of the wire thickness. With proper heterostructure and doping design, these highly aligned GaN wires are promising for photonic and electronic applications monolithically integrated on silicon.
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30 June 2014
Research Article|
June 30 2014
Growth and characterization of horizontal GaN wires on silicon Available to Purchase
Xinbo Zou;
Xinbo Zou
1Department of Electronic and Computer Engineering,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
2HKUST Jockey Club Institute for Advanced Study,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
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Xing Lu;
Xing Lu
1Department of Electronic and Computer Engineering,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
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Ryan Lucas;
Ryan Lucas
3Department of Chemical and Biological Engineering,
University of Wisconsin-Madison
, Madison, Wisconsin 53706, USA
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Thomas F. Kuech;
Thomas F. Kuech
2HKUST Jockey Club Institute for Advanced Study,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
3Department of Chemical and Biological Engineering,
University of Wisconsin-Madison
, Madison, Wisconsin 53706, USA
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Jonathan W. Choi;
Jonathan W. Choi
4Department of Materials Science and Engineering,
University of Wisconsin-Madison
, Madison, Wisconsin 53706, USA
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Padma Gopalan;
Padma Gopalan
4Department of Materials Science and Engineering,
University of Wisconsin-Madison
, Madison, Wisconsin 53706, USA
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Kei May Lau
Kei May Lau
a)
1Department of Electronic and Computer Engineering,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
2HKUST Jockey Club Institute for Advanced Study,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
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Xinbo Zou
1,2
Xing Lu
1
Ryan Lucas
3
Thomas F. Kuech
2,3
Jonathan W. Choi
4
Padma Gopalan
4
Kei May Lau
1,2,a)
1Department of Electronic and Computer Engineering,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
2HKUST Jockey Club Institute for Advanced Study,
The Hong Kong University of Science and Technology
, Kowloon, Hong Kong
3Department of Chemical and Biological Engineering,
University of Wisconsin-Madison
, Madison, Wisconsin 53706, USA
4Department of Materials Science and Engineering,
University of Wisconsin-Madison
, Madison, Wisconsin 53706, USA
a)
Electronic mail: [email protected]
Appl. Phys. Lett. 104, 262101 (2014)
Article history
Received:
April 13 2014
Accepted:
June 18 2014
Citation
Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, Kei May Lau; Growth and characterization of horizontal GaN wires on silicon. Appl. Phys. Lett. 30 June 2014; 104 (26): 262101. https://doi.org/10.1063/1.4886126
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