We investigate the band structures and transport properties of a two-dimensional model of topological insulator, with a fractal edge or a fractal bulk. A fractal edge does not affect the robust transport even when the fractal pattern has reached the resolution of the atomic-scale, because the bulk is still well insulating against backscattering. On the other hand, a fractal bulk can support the robust transport only when the fractal resolution is much larger than a critical size. Smaller resolution of bulk fractal pattern will lead to remarkable backscattering and localization, due to strong couplings of opposite edge states on narrow sub-edges which appear almost everywhere in the fractal bulk.

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