Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm2. Those values are the smallest obtained with a top-down lithography method.
REFERENCES
1.
V.
Krivitsky
, L.-C.
Hsiung
, A.
Lichtenstein
, B.
Brudnik
, R.
Kantaev
, R.
Elnathan
, A.
Pevzner
, A.
Khatchtourints
, and F.
Patolsky
, Nano Lett
12
, 4748
(2012
).2.
Q.
Qing
, Z.
Jiang
, L.
Xu
, R.
Gao
, L.
Mai
, and C. M.
Lieber
, Nature Nanotechnol.
9
, 142
(2014
).3.
M.
Chiesa
, P. P.
Cárdenas
, F.
Otón
, J.
Martínez
, M.
Mas-Torrent
, F.
García
, J. C.
Alonso
, C.
Rovira
, and R.
Garcia
, Nano Lett.
12
, 1275
(2012
).4.
E.
Gil-Santos
, D.
Ramos
, J.
Martínez
, M.
Fernández-Regúlez
, R.
García
, A.
San Paulo
, M.
Calleja
, and J.
Tamayo
, Nature Nanotechnol.
5
, 641
(2010
).5.
J. L.
Arlett
, E. B.
Meyers
, and M. L.
Roukes
, Nature Nanotechnol.
6
, 203
(2011
).6.
J.
Llobet
, M.
Sansa
, M.
Gerbolés
, N.
Mestres
, J.
Arbiol
, X.
Borrisé
, and F.
Pérez-Murano
, Nanotechnology
25
, 135302
(2014
).7.
M.
Sansa
, M.
Fernández-Regúlez
, A.
San Paulo
, and F.
Pérez-Murano
, Appl. Phys. Lett.
101
, 243115
(2012
).8.
P.
Yang
, R.
Yan
, and M.
Fardy
, Nano Lett.
10
, 1529
(2010
).9.
C. M.
Lieber
, MRS Bull.
36
, 1052
(2011
).10.
Y.
Wang
, T.
Wang
, P.
Da
, M.
Xu
, H.
Wu
, and G.
Zheng
, Adv. Mater.
25
, 5177
(2013
).11.
M. M.
Mirza
, H.
Zhou
, P.
Velha
, X.
Li
, K. E.
Docherty
, A.
Samarelli
, G.
Ternent
, and D. J.
Paul
, J. Vac. Sci. Technol. B
30
, 06FF02
(2012
).12.
S. D.
Suk
, S.-Y.
Lee
, S.-M.
Kim
, E.-J.
Yoon
, M.-S.
Kim
, M.
Li
, C. W.
Oh
, K. H.
Yeo
, S. H.
Kim
, D.-S.
Shin
, K.-H.
Lee
, H. S.
Park
, J. N.
Han
, C. J.
Park
, J.-B.
Park
, D.-W.
Kim
, D.
Park
, and B.
Ryu
, Tech. Dig. - IEEE Int. Electron Dev. Meet.
2005
, 735
.13.
K.
Trivedi
, H.
Yuk
, H. C.
Floresca
, M. J.
Kim
, and W.
Hu
, Nano Lett.
11
, 1412
(2011
).14.
R.-G.
Huang
, D.
Tham
, D.
Wang
, and J. R.
Heath
, Nano Res.
4
, 1005
(2011
).15.
J.
Martinez
, R. V.
Martínez
, and R.
Garcia
, Nano Lett.
8
, 3636
(2008
).16.
R.
Garcia
, R. V.
Martinez
, and J.
Martinez
, Chem. Soc. Rev.
35
, 29
(2006
).17.
D.
Pires
, J. L.
Hedrick
, A.
De Silva
, J.
Frommer
, B.
Gotsmann
, H.
Wolf
, M.
Despont
, U.
Duerig
, and A. W.
Knoll
, Science
328
, 732
(2010
).18.
M.
Lorenzoni
and B.
Torre
, Appl. Phys. Lett.
103
, 163109
(2013
).19.
S. E.
Vasko
, A.
Kapetanovic
, V.
Talla
, M. D.
Brasino
, Z.
Zhu
, A.
Scholl
, J. D.
Torrey
, and M.
Rolandi
, Nano Lett.
11
, 2386
(2011
).20.
R. V.
Martinez
, J.
Martínez
, and R.
Garcia
, Nanotechnology
21
, 245301
(2010
).21.
Y. K.
Ryu
, M.
Chiesa
, and R.
Garcia
, Nanotechnology
24
, 315205
(2013
).22.
L. L.
Cheong
, P.
Paul
, F.
Holzner
, M.
Despont
, D. J.
Coady
, J. L.
Hedrick
, R.
Allen
, A. W.
Knoll
, and U.
Duerig
, Nano Lett.
13
, 4485
(2013
).23.
H.
Jansen
, H.
Gardeniers
, M
de Boer
, M.
Elwenspoek
, and J.
Fluitman
, J. Micromech. Microeng.
6
, 14
(1996
).24.
M. J.
Madou
, Fundamentals of Microfabrication and Nanotechnology
, Manufacturing Techniques for Microfabrication and Nanotechnology Vol. 2, 3rd ed. (CRC press
, 2012
).25.
I. W.
Rangelow
, J. Vac. Sci. Technol. A
21
, 1550
(2003
).26.
M.
Calleja
, M.
Tello
, and R.
Garcia
, J. Appl. Phys.
92
, 5539
(2002
).27.
S.
Gomez
, R. J.
Belen
, M.
Kiehlbauch
, and E. S.
Aydil
, J. Vac. Sci. Technol. A
22
, 606
(2004
).28.
R.
d'Agostino
and D. L.
Flamm
, J. Appl. Phys.
52
, 162
(1981
).29.
N. O. V.
Plank
, M. A.
Blauw
, E. W. J. M.
van der Drift
, and R.
Cheung
, J. Phys. D: Appl. Phys.
36
, 482
(2003
).30.
T.
Maruyama
, T.
Narukage
, R.
Onuki
, and N.
Fujiwara
, J. Vac. Sci. Technol. B
28
, 862
(2010
).31.
J. H.
Choi
, L.
Latu-Romain
, E.
Bano
, F.
Dhalluin
, T.
Chevolleau
, and T.
Baron
, J. Phys. D: Appl. Phys.
45
, 235204
(2012
).32.
33.
K.
Morimoto
, F.
Perez-Murano
, and J. A.
Dagata
, Appl. Surf. Sci.
158
, 205
(2000
).34.
G. S.
Oehrlein
and Y.
Kurogi
, Mater. Sci. Eng.
24
, 153
(1998
).35.
F.
Simescu
, D.
Coiffard
, M.
Lazar
, P.
Brosselard
, and D.
Planson
, J. Optoelectron. Adv.
12
, 766
(2010
).© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
You do not currently have access to this content.