We have studied angle dependent magnetoresistance of Bi2Te3 thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance, we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.
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indicates the 2D nature of the carriers. In thin TI film, both the surfaces are coupled with a gap opening at the Dirac point, and the otherwise bulk states become quasi-2D due to confinement in one direction4,34,39,59–61 and they become strongly coupled with the surfaces through scattering allowing the system to behave like a single phase-coherent channel.18,23,34,35,61
The film thickness should hold for HLN equation to be valid in 2D. Here, d = 4 nm and for B = 9 T. So for high field 2D HLN equation is less valid, which may be a reason for very little deviation in fitting near 9 T.
This is an upper limit on obtained from fitting, as lowering further is insensitive to fitting due to the function. So actual value of could be lower than our estimate.
Although the EEI theory of Lee-Ramakrishnan is not derived under strong SOC, we have not considered any further theory of EEI in strong SOC system for better fitting of perpendicular field MR data, as original HLN theory alone can explain it.
The free space permittivity is used for calculation, as the film thickness is comparable to the mean in-plane distance between electrons (order of ) and most of the electric field lines responsible for EEI pass through the surrounding media.64
To fit the angular dependency of the data with HLN equation, data-point was replaced by ; as the change in MR for perpendicular field is not due to WAL effect but due to the Zeeman effect, which is suppressed for θ < 80°.23