Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.
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19 May 2014
Research Article|
May 23 2014
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
Special Collection:
The Dawn of Gallium Oxide Microelectronics
Wan Sik Hwang;
Wan Sik Hwang
a)
1Department of Materials Engineering,
Korea Aerospace University
, Gyeonggi, 412791, South Korea
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Amit Verma;
Amit Verma
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Hartwin Peelaers;
Hartwin Peelaers
3Materials Department,
University of California Santa Barbara
, California 93106, USA
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Vladimir Protasenko;
Vladimir Protasenko
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Sergei Rouvimov;
Sergei Rouvimov
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Huili (Grace) Xing;
Huili (Grace) Xing
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Alan Seabaugh;
Alan Seabaugh
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Wilfried Haensch;
Wilfried Haensch
4
IBM T. J. Watson Research Center
, Yorktown Heights, New York 10598, USA
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Chris Van de Walle;
Chris Van de Walle
3Materials Department,
University of California Santa Barbara
, California 93106, USA
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Zbigniew Galazka;
Zbigniew Galazka
5
Leibniz Institute for Crystal Growth
, Max-Born Str., D-12489 Berlin, Germany
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Martin Albrecht;
Martin Albrecht
5
Leibniz Institute for Crystal Growth
, Max-Born Str., D-12489 Berlin, Germany
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Roberto Fornari;
Roberto Fornari
5
Leibniz Institute for Crystal Growth
, Max-Born Str., D-12489 Berlin, Germany
6Department of Physics and Earth Science,
University of Parma
, Parma, 43124 Italy
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Debdeep Jena
Debdeep Jena
a)
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Wan Sik Hwang
1,a)
Amit Verma
2
Hartwin Peelaers
3
Vladimir Protasenko
2
Sergei Rouvimov
2
Huili (Grace) Xing
2
Alan Seabaugh
2
Wilfried Haensch
4
Chris Van de Walle
3
Zbigniew Galazka
5
Martin Albrecht
5
Roberto Fornari
5,6
Debdeep Jena
2,a)
1Department of Materials Engineering,
Korea Aerospace University
, Gyeonggi, 412791, South Korea
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
3Materials Department,
University of California Santa Barbara
, California 93106, USA
4
IBM T. J. Watson Research Center
, Yorktown Heights, New York 10598, USA
5
Leibniz Institute for Crystal Growth
, Max-Born Str., D-12489 Berlin, Germany
6Department of Physics and Earth Science,
University of Parma
, Parma, 43124 Italy
a)
Electronic addresses: [email protected] and [email protected].
Appl. Phys. Lett. 104, 203111 (2014)
Article history
Received:
April 20 2014
Accepted:
May 13 2014
Connected Content
Citation
Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Fornari, Debdeep Jena; High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes. Appl. Phys. Lett. 19 May 2014; 104 (20): 203111. https://doi.org/10.1063/1.4879800
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