The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in regions of reduced recombination enables a recovery of open-circuit voltage (VOC). Devices with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell were experimentally investigated. While the VOC of the emitter-shifted device was degraded, the center and base-shifted devices exhibited VOC comparable to the baseline structure. This asymmetry is attributed to background doping which modifies the recombination profile and must be considered when optimizing QD placement.

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