Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase.
Nano-porosity in GaSb induced by swift heavy ion irradiation
Present address: Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.
Present address: Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil.
Present address: School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Western Australia 6009, Australia.
P. Kluth, J. Sullivan, W. Li, R. Weed, C. S. Schnohr, R. Giulian, L. L. Araujo, W. Lei, M. D. Rodriguez, B. Afra, T. Bierschenk, R. C. Ewing, M. C. Ridgway; Nano-porosity in GaSb induced by swift heavy ion irradiation. Appl. Phys. Lett. 13 January 2014; 104 (2): 023105. https://doi.org/10.1063/1.4861747
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