Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase.
REFERENCES
1.
P.
Dutta
, H.
Bhat
, and V.
Kumar
, J. Appl. Phys.
81
, 5821
(1997
).2.
A. W.
Bett
, F.
Dimroth
, G.
Stollwerck
, and O. V.
Sulima
, Appl. Phys. A
69
, 119
(1999
).3.
D.
Martin
, C.
Algora
, V.
Corregidor
, and A.
Datas
, J. Sol. Energy Eng.
129
, 283
(2007
).4.
L.
Stalmans
, J.
Poortmans
, H.
Bender
, M.
Caymax
, K.
Said
, E.
Vazsonyi
, J.
Nijs
, and R.
Mertens
, Prog. Photovoltaics
6
, 233
(1998
).5.
H.
Föll
, J.
Carstensen
, and S.
Frey
, J. Nanomater.
2006
, 91635
.6.
Porous Silicon
edited by Z. C.
Feng
and R.
Tsu
(World Scientific Publishing Company
, Singapore
, 1994
).7.
H.
Föll
, S.
Langa
, J.
Carstensen
, M.
Christophersen
, and I. M.
Tiginyanu
, Adv. Mater.
15
, 183
(2003
).8.
L. M.
Wang
and R. C.
Birtcher
, Philos. Mag.
64
, 1209
(1991
).9.
R.
Callec
, P.
Favennec
, M.
Salvi
, H. L.
Haridon
, and M.
Gauneau
, Appl. Phys. Lett.
59
, 1872
(1991
).10.
S. M.
Kluth
, J.
Gerald
, and M. C.
Ridgway
, Appl. Phys. Lett.
86
, 131920
(2005
).11.
P.
Kluth
, S. M.
Kluth
, B.
Johannessen
, C.
Glover
, G. J.
Foran
, and M. C.
Ridgway
, J. Appl. Phys.
110
, 113528
(2011
).12.
I. H.
Wilson
, J. Appl. Phys.
53
, 1698
(1982
).13.
A. G.
Perez-Bergquist
, K.
Sun
, L.
Wang
, and Y.
Zhang
, J. Mater. Res.
24
, 2286
(2009
).14.
A.
Perez-Bergquist
, S.
Zhu
, K.
Sun
, X.
Xiang
, Y.
Zhang
, and L.
Wang
, Small
4
, 1119
(2008
).15.
N.
Nitta
, M.
Taniwaki
, Y.
Hayashi
, and T.
Yoshiie
, J. Appl. Phys.
92
, 1799
(2002
).16.
T.
Steinbach
, J.
Wernecke
, P.
Kluth
, M. C.
Ridgway
, and W.
Wesch
, Phys. Rev. B
84
, 104108
(2011
).17.
W.
Wesch
, C. S.
Schnohr
, P.
Kluth
, Z. S.
Hussain
, L. L.
Araujo
, R.
Giulian
, D. J.
Sprouster
, A. P.
Byrne
, and M. C.
Ridgway
, J. Phys. D: Appl. Phys
42
, 115402
(2009
).18.
T.
Steinbach
, C. S.
Schnohr
, P.
Kluth
, R.
Giulian
, L. L.
Araujo
, D. J.
Sprouster
, M. C.
Ridgway
, and W.
Wesch
, Phys. Rev. B
83
, 054113
(2011
).19.
J. P.
Sullivan
, J.
Roberts
, R. W.
Weed
, M. R.
Went
, D. S.
Newman
, and S. J.
Buckman
, Meas. Sci. Technol.
21
, 085702
(2010
).20.
J. F.
Ziegler
, J. P.
Biersack
, and U.
Littmark
, The Stopping and Range of Ions in Matter
(Pergamon
, New York, NY
, 1985
).21.
G.
Szenes
, Z. E.
Horvath
, B.
Pecz
, F.
Paszti
, and L.
Toth
, Phys. Rev. B
65
, 045206
(2002
).22.
P.
Kluth
, C. S.
Schnohr
, D. J.
Sprouster
, A.
Byrne
, D. J.
Cookson
, and M. C.
Ridgway
, Nucl. Instrum. Methods Phys. Res. B
266
, 2994
(2008
).23.
M. J.
Puska
and C.
Corbel
, Phys. Rev. B
38
, 9874
(1988
).24.
M.
Saito
and A.
Oshiyama
, Phys. Rev. B
53
, 7810
(1996
).25.
M. C.
Ridgway
, T.
Bierschenk
, R.
Giulian
, B.
Afra
, M. D.
Rodriguez
, L. L.
Araujo
, A. P.
Byrne
, N.
Kirby
, O. H.
Pakarinen
, F.
Djurabekova
, K.
Nordlund
, M.
Schleberger
, O.
Osmani
, N.
Medvedev
, B.
Rethfeld
, and P.
Kluth
, Phys. Rev. Lett.
110
, 245502
(2013
).26.
P.
Kluth
, C. S.
Schnohr
, O. H.
Pakarinen
, F.
Djurabekova
, D. J.
Sprouster
, R.
Giulian
, M. C.
Ridgway
, A.
Byrne
, C.
Trautmann
, D. J.
Cookson
, K.
Nordlund
, and M.
Toulemonde
, Phys. Rev. Lett.
101
, 175503
(2008
).27.
B.
Afra
, M.
Lang
, M.
Rodriguez
, J.
Zhang
, R.
Giulian
, N.
Kirby
, R. C.
Ewing
, C.
Trautmann
, M.
Toulemonde
, and P.
Kluth
, Phys. Rev. B
83
, 064116
(2011
).28.
C. S.
Schnohr
, P.
Kluth
, R.
Giulian
, D. J.
Llewellyn
, D. J.
Cookson
, and M. C.
Ridgway
, Phys. Rev. B
81
, 075201
(2010
).© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
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