We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable {111} facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.
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13 January 2014
Research Article|
January 16 2014
Strain relaxation of GaAs/Ge crystals on patterned Si substrates
A. G. Taboada;
A. G. Taboada
a)
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich, Switzerland
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T. Kreiliger;
T. Kreiliger
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich, Switzerland
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C. V. Falub;
C. V. Falub
b)
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich, Switzerland
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F. Isa;
F. Isa
2
L-NESS, Department of Physics, Politecnico di Milano
, via Anzani 42, I-22100 Como, Italy
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M. Salvalaglio;
M. Salvalaglio
3
L-NESS, Department of Materials Science, Università di Milano-Bicocca
, via Cozzi 55, I-20125 Milano, Italy
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L. Wewior;
L. Wewior
4
IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC)
, C/Isaac Newton 8, E-28760 Tres Cantos, Madrid, Spain
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D. Fuster;
D. Fuster
4
IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC)
, C/Isaac Newton 8, E-28760 Tres Cantos, Madrid, Spain
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M. Richter;
M. Richter
5
Functional Materials Group, IBM Research-Zürich
, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
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E. Uccelli;
E. Uccelli
5
Functional Materials Group, IBM Research-Zürich
, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
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P. Niedermann;
P. Niedermann
6
Centre Suisse d'Electronique et Microtechnique, Jaquet-Droz 1
, CH-2002 Neuchatel, Switzerland
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A. Neels;
A. Neels
6
Centre Suisse d'Electronique et Microtechnique, Jaquet-Droz 1
, CH-2002 Neuchatel, Switzerland
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F. Mancarella;
F. Mancarella
7
CNR-IMM
of Bologna, Via Gobetti 101, I-40129 Bologna, Italy
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B. Alén;
B. Alén
4
IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC)
, C/Isaac Newton 8, E-28760 Tres Cantos, Madrid, Spain
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L. Miglio;
L. Miglio
3
L-NESS, Department of Materials Science, Università di Milano-Bicocca
, via Cozzi 55, I-20125 Milano, Italy
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A. Dommann;
A. Dommann
6
Centre Suisse d'Electronique et Microtechnique, Jaquet-Droz 1
, CH-2002 Neuchatel, Switzerland
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G. Isella;
G. Isella
2
L-NESS, Department of Physics, Politecnico di Milano
, via Anzani 42, I-22100 Como, Italy
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H. von Känel
H. von Känel
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich, Switzerland
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
b)
Present address: OC Oerlikon Advanced Technologies, Iramali 18, 9496 Balzers, Liechtenstein.
Appl. Phys. Lett. 104, 022112 (2014)
Article history
Received:
November 19 2013
Accepted:
December 28 2013
Citation
A. G. Taboada, T. Kreiliger, C. V. Falub, F. Isa, M. Salvalaglio, L. Wewior, D. Fuster, M. Richter, E. Uccelli, P. Niedermann, A. Neels, F. Mancarella, B. Alén, L. Miglio, A. Dommann, G. Isella, H. von Känel; Strain relaxation of GaAs/Ge crystals on patterned Si substrates. Appl. Phys. Lett. 13 January 2014; 104 (2): 022112. https://doi.org/10.1063/1.4861864
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