Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼25 μm semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed.
Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates
Emmanuel U. Onyegam, Dabraj Sarkar, Mohamed M. Hilali, Sayan Saha, Leo Mathew, Rajesh A. Rao, Ryan S. Smith, Dewei Xu, Dharmesh Jawarani, Ricardo Garcia, Moses Ainom, Sanjay K. Banerjee; Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates. Appl. Phys. Lett. 14 April 2014; 104 (15): 153902. https://doi.org/10.1063/1.4871503
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