Low-frequency 1/f noise in MoS₂ transistors: Relative contributions of the channel and contacts Available to Purchase

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS₂ field-effect transistors revealing the relative contributions of the MoS₂ channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS₂ transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS₂ transistors, are 2 × 10¹⁹ eV⁻¹cm⁻³ and 2.5 × 10²⁰ eV⁻¹cm⁻³ for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS₂ transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS₂ and other van der Waals materials.