Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers Available to Purchase

CoFe/IrMn bilayers with perpendicular magnetization for various IrMn layer thicknesses exhibit unusual two-step hysteresis loops with both positive and negative loop shifts. Observed at room temperature in the as-grown state, they provide direct evidence of large antiferromagnetic domain formation at the IrMn interface. The exchange bias field reaches 100 mT with an IrMn layer thickness of 4 nm after field annealing at 200 °C–300 °C in 800 mT, which is at least three times as large as the coercivity, and may be useful for reference layers of spin-valves or magnetic tunnel junctions with perpendicular magnetic anisotropy.