We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of the top p-GaN layer and the active region, respectively.
Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation
Jeomoh Kim, Mi-Hee Ji, Dajun Yuan, Rui Guo, Jianping Liu, Mojtaba Asadirad, Theeradetch Detchprohm, Min-Ki Kwon, Russell D. Dupuis, Suman Das, Jae-Hyun Ryou; Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation. Appl. Phys. Lett. 7 April 2014; 104 (14): 141105. https://doi.org/10.1063/1.4871089
Download citation file: