The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90–363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data from Trupke et al. [J. Appl. Phys. 94, 4930 (2003).] We present a polynomial parameterization describing the temperature dependence of the product of B(T) and the square of the intrinsic carrier density. We also find that B(T) saturates at a near constant value at room temperature and above for silicon samples with relatively low free carrier densities.
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17 March 2014
Research Article|
March 19 2014
Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence
Hieu T. Nguyen;
Hieu T. Nguyen
a)
1
Research School of Engineering, College of Engineering and Computer Science, The Australian National University
, Canberra, ACT 0200, Australia
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Simeon C. Baker-Finch;
Simeon C. Baker-Finch
1
Research School of Engineering, College of Engineering and Computer Science, The Australian National University
, Canberra, ACT 0200, Australia
2
PV Lighthouse
, Coledale, NSW 2515, Australia
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Daniel Macdonald
Daniel Macdonald
1
Research School of Engineering, College of Engineering and Computer Science, The Australian National University
, Canberra, ACT 0200, Australia
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 104, 112105 (2014)
Article history
Received:
February 24 2014
Accepted:
March 10 2014
Citation
Hieu T. Nguyen, Simeon C. Baker-Finch, Daniel Macdonald; Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence. Appl. Phys. Lett. 17 March 2014; 104 (11): 112105. https://doi.org/10.1063/1.4869295
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