In this Letter, the origins of current fluctuations of Al/AlOx/WOy/W bilayer resistive random access memory (RRAM) devices are investigated through detailed noise analysis. Random telegraph noise (RTN) measurements were performed on RRAMs with three different resistance states. An obvious RTN signal with 40.7% amplitude difference was found at high resistance state, and the trapping/de-trapping process leading to the RTN signal was studied in detail by extracting the trap energy from energy diagram. For median and low resistance states, the resistance fluctuations were 34.0% and 0.3%, respectively. To further study the RTN characteristics, the normalized power spectral density (PSD) was analyzed. It is found that, for one dominant-trap caused RTN phenomena, the normalized noise PSD behaves as 1/f 2 on the high resistance state; while for median and low resistance states, the noise follows 1/f rule, suggesting that the current fluctuations are associated with the envelop of multiple RTNs caused by traps located near/in the conductive filament. Based on the noise analyses in time and frequency domains, a conduction mechanism is proposed to describe the trap effects on the current fluctuations of different resistance states.
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10 March 2014
Research Article|
March 13 2014
Random telegraph noise analysis in AlOx/WOy resistive switching memories
Ye Zhang;
Ye Zhang
1
Institute of Microelectronics, Tsinghua University
, Beijing 100084, China
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Huaqiang Wu;
Huaqiang Wu
a)
1
Institute of Microelectronics, Tsinghua University
, Beijing 100084, China
2
Tsinghua National Laboratory for Information Science and Technology (TNList)
, Beijing 100084, China
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Minghao Wu;
Minghao Wu
1
Institute of Microelectronics, Tsinghua University
, Beijing 100084, China
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Ning Deng;
Ning Deng
1
Institute of Microelectronics, Tsinghua University
, Beijing 100084, China
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Zhiping Yu;
Zhiping Yu
1
Institute of Microelectronics, Tsinghua University
, Beijing 100084, China
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Jinyu Zhang;
Jinyu Zhang
1
Institute of Microelectronics, Tsinghua University
, Beijing 100084, China
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He Qian
He Qian
1
Institute of Microelectronics, Tsinghua University
, Beijing 100084, China
2
Tsinghua National Laboratory for Information Science and Technology (TNList)
, Beijing 100084, China
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a)
E-mail: [email protected]
Appl. Phys. Lett. 104, 103507 (2014)
Article history
Received:
December 04 2013
Accepted:
February 26 2014
Citation
Ye Zhang, Huaqiang Wu, Minghao Wu, Ning Deng, Zhiping Yu, Jinyu Zhang, He Qian; Random telegraph noise analysis in AlOx/WOy resistive switching memories. Appl. Phys. Lett. 10 March 2014; 104 (10): 103507. https://doi.org/10.1063/1.4868383
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