We performed radiofrequency (RF) reflectometry measurements at 2–4 GHz on electrolyte-gated graphene field-effect transistors, utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced, even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution.
REFERENCES
1.
K. S.
Novoselov
, A. K.
Geim
, S. V.
Morozov
, D.
Jiang
, Y.
Zhang
, S. V.
Dubonos
, I. V.
Grigorieva
, and A. A.
Girsov
, “Electric field effect in atomically thin carbon films
,” Science
306
, 666
–669
(2004
).2.
K. S.
Novoselov
, D.
Jiang
, F.
Schedin
, T. J.
Booth
, V. V.
Khotkevich
, S. V.
Morozov
, and A. K.
Geim
, “Two-dimensional atomic crystals
,” Proc. Natl. Acad. Sci. U.S.A.
102
, 10451
–10453
(2005
).3.
S. D.
Sarma
, S.
Adam
, E. H.
Hwang
, and E.
Rossi
, “Electronic transport in two dimensional graphene
,” Rev. Mod. Phys.
83
, 407
–470
(2011
).4.
F.
Schwierz
, “Graphene transistors
,” Nat. Nanotechnol.
5
, 487
–496
(2010
).5.
Y. M.
Lin
, H. Y.
Chiu
, K. A.
Jenkins
, D. B.
Farmer
, Ph.
Avouris
, and A.
Valdes-Garcia
, “Dual-gate graphene FETs with fT of 50 GHz
,” IEEE Electron Device Lett.
31
, 68
–70
(2010
).6.
Y. M.
Lin
, C.
Dimitrakopoulos
, K. A.
Jenkins
, D. B.
Farmer
, H.-Y.
Chiu
, A.
Grill
, and Ph.
Avouris
, “100-GHz transistors from wafer-scale epitaxial graphene
,” Science
327
, 662
(2010
).7.
E.
Pallecchi
, C.
Benz
, A. C.
Betz
, H. V.
Löhneysen
, B.
Plaçais
, and R.
Danneau
, “Graphene microwave transistors on sapphire substrates
,” Appl. Phys. Lett.
99
, 113502
(2011
).8.
L.
Liao
, Y. C.
Lin
, M.
Bao
, R.
Cheng
, J.
Bai
, Y.
Liu
, Y.
Qu
, K. L.
Wang
, Y.
Huang
, and X.
Duan
, “High-speed graphene transistors with a self-aligned nanowire gate
,” Nature
467
, 305
–308
(2010
).9.
C. R.
Dean
, A. F.
Young
, I.
Meric
, C.
Lee
, L.
Wang
, S.
Sorgenfrei
, K.
Watanabe
, T.
Taniguchi
, P.
Kim
, K. L.
Shepard
, and J.
Hone
, “Boron nitride substrates for high-quality graphene electronics
,” Nat. Nanotechnol.
5
, 722
–726
(2010
).10.
H.
Wang
, T.
Taychatanapat
, A.
Hsu
, K.
Watanabe
, T.
Taniguchi
, P.
Jarillo-Herrero
, and T.
Palacios
, “BN/graphene/BN transistors for RF applications
,” IEEE Electron Device Lett.
32
, 1209
–1211
(2011
).11.
H.
Wang
, D.
Nezich
, J.
Kong
, and T.
Palacios
, “Graphene frequency multipliers
,” IEEE Electron Device Lett.
30
, 547
–549
(2009
).12.
Z.
Wang
, Z.
Zhang
, H.
Xu
, L.
Ding
, S.
Wang
, and L. M.
Peng
, “A high-performance top-gate graphene field-effect transistor based frequency doubler
,” Appl. Phys. Lett.
96
, 173104
(2010
).13.
D. L.
Sounas
and C.
Caloz
, “Electromagnetic nonreciprocity and gyrotropy of graphene
,” Appl. Phys. Lett.
98
, 021911
(2011
).14.
A.
Fallahi
and J.
Perruisseau-Carrier
, “Manipulation of giant faraday rotation in graphene metasurfaces
,” Appl. Phys. Lett.
101
, 231605
(2012
).15.
J.
Perruisseau-Carrier
, “Graphene for antenna applications: Opportunities and challenges from microwaves to THz
,” e-print arXiv:1210.3444.16.
M.
Dragoman
, D.
Neculoiu
, A.
Cismaru
, A. A.
Muller
, G.
Deligeorgis
, G.
Konstantinidis
, D.
Dragoman
, and R.
Plana
, “Coplanar waveguide on graphene in the range 40 MHz–110 GHz
,” Appl. Phys. Lett.
99
, 033112
(2011
).17.
I.
Iramnaaza
, Y.
Xinga
, K.
Xuea
, Y.
Zhuanga
, and R.
Fitchb
, “Graphene based RF/microwave impedance sensing of DNA
,” in Proceedings of the 61st IEEE Electronic Components and Technology Conference
(ECTC
, 2011
), pp. 1030
–1034
.18.
T.
Le
, T.
Thai
, V.
Lakafosis
, M.
Tentzeris
, Z.
Lin
, Y.
Fang
, K.
Sandhage
, and C.
Wong
, “Graphene enhanced wireless sensors
,” Sensor
2012 IEEE
, 1
–4
(2012
).19.
H. S.
Skulason
, H. V.
Nguyen
, A.
Guermoune
, V.
Sridharan
, M.
Siaj
, C.
Caloz
, and T.
Szkopek
, “110 GHz measurement of large-area graphene integrated in low-loss microwave structures
,” Appl. Phys. Lett.
99
, 153504
(2011
).20.
J.
O'M. Bockris
, E.
Gileadi
, and K.
Müller
, “Dielectric relaxation in the electric double layer
,” J. Chem. Phys.
44
, 1445
(1966
).21.
S.
Hellmüller
, M.
Pikulski
, T.
Müller
, B.
Küng
, G.
Puebla-Hellmann
, A.
Wallraff
, M.
Beck
, K.
Ensslin
, and T.
Ihn
, “Optimization of sample-chip design for stub-matched radio-frequency reflectometry measurements
,” Appl. Phys. Lett.
101
, 042112
(2012
).22.
G.
Puebla-Hellmann
and A.
Wallraff
, “Realization of gigahertz-frequency impedance matching circuits for nanoscale devices
,” Appl. Phys. Lett.
101
, 053108
(2012
).23.
24.
W.
Fu
, C.
Nef
, O.
Knopfmacher
, A.
Tarasov
, M.
Weiss
, M.
Calame
, and C.
Schönenberger
, “Graphene transistors are insensitive to pH changes in solution
,” Nano Lett.
11
, 3597
–3600
(2011
).25.
W.
Fu
, C.
Nef
, A.
Tarasov
, M.
Wipf
, R.
Stoop
, O.
Knopfmacher
, M.
Weiss
, M.
Calame
, and C.
Schönenberger
, “High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization
” Nanoscale
5
, 12104
–12110
(2013
).26.
X. S.
Li
, W. W.
Cai
, J.
An
, S.
Kim
, J.
Nah
, D. X.
Yang
, R.
Piner
, A.
Velamakanni
, I.
Jung
, E.
Tutuc
, S. K.
Banerjee
, L.
Colombo
, and R. S.
Ruoff
, “Large-area synthesis of high-quality and uniform graphene films on copper foils
,” Science
324
, 1312
–1314
(2009
).27.
J.
Xia
, F.
Chen
, J.
Li
, and N.
Tao
, “Measurement of the quantum capacitance of graphene
,” Nat. Nanotechnol.
4
, 505
–509
(2009
).© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
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