A SiGe-based n-channel tunnel field-effect transistor design employing a strained-Si/strained-Ge staggered-gap heterojunction with a small effective band-gap (122 meV) at the interface is investigated via numerical simulations using a semi-classical quantum correction obtained from the density-gradient model. A gate-normal tunneling geometry is used to increase tunneling area and reduce subthreshold swing. The strain leads to degeneracy breaking among the silicon conduction band valleys, reducing the density of states and associated quantum capacitance with better gate-to-tunnel barrier coupling. Performance evaluation using a figure-of-merit “I60,” where the drain current corresponds to a subthreshold slope of 60 mV/decade, suggests that the device has the potential to be competitive with modern metal-oxide-semiconductor field-effect transistors.
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26 August 2013
Research Article|
August 27 2013
Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor
William Hsu;
William Hsu
a)
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
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Jason Mantey;
Jason Mantey
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
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Leonard F. Register;
Leonard F. Register
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
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Sanjay K. Banerjee
Sanjay K. Banerjee
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
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William Hsu
a)
Jason Mantey
Leonard F. Register
Sanjay K. Banerjee
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
Appl. Phys. Lett. 103, 093501 (2013)
Article history
Received:
July 26 2013
Accepted:
August 13 2013
Citation
William Hsu, Jason Mantey, Leonard F. Register, Sanjay K. Banerjee; Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor. Appl. Phys. Lett. 26 August 2013; 103 (9): 093501. https://doi.org/10.1063/1.4819458
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