A SiGe-based n-channel tunnel field-effect transistor design employing a strained-Si/strained-Ge staggered-gap heterojunction with a small effective band-gap (122 meV) at the interface is investigated via numerical simulations using a semi-classical quantum correction obtained from the density-gradient model. A gate-normal tunneling geometry is used to increase tunneling area and reduce subthreshold swing. The strain leads to degeneracy breaking among the silicon conduction band valleys, reducing the density of states and associated quantum capacitance with better gate-to-tunnel barrier coupling. Performance evaluation using a figure-of-merit “I60,” where the drain current corresponds to a subthreshold slope of 60 mV/decade, suggests that the device has the potential to be competitive with modern metal-oxide-semiconductor field-effect transistors.
Skip Nav Destination
Article navigation
26 August 2013
Research Article|
August 27 2013
Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor
William Hsu;
William Hsu
a)
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
Search for other works by this author on:
Jason Mantey;
Jason Mantey
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
Search for other works by this author on:
Leonard F. Register;
Leonard F. Register
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
Search for other works by this author on:
Sanjay K. Banerjee
Sanjay K. Banerjee
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin
, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA
Search for other works by this author on:
a)
Author to whom correspondence should be addressed. Electronic mail: william.hsu@utexas.edu.
Appl. Phys. Lett. 103, 093501 (2013)
Article history
Received:
July 26 2013
Accepted:
August 13 2013
Citation
William Hsu, Jason Mantey, Leonard F. Register, Sanjay K. Banerjee; Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor. Appl. Phys. Lett. 26 August 2013; 103 (9): 093501. https://doi.org/10.1063/1.4819458
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00