Since the very inception of integrated circuits, dissimilar materials have been used for fabricating devices and interconnects. Typically, semiconductors are used for devices and metals are used for interconnecting them. This, however, leads to a “contact resistance” between them that degrades device and circuit performance, especially for nanoscale technologies. This letter introduces and explores an “all-graphene” device-interconnect co-design scheme, where a single 2-dimensional sheet of monolayer graphene is proposed to be monolithically patterned to form both active devices (graphene nanoribbon tunnel-field-effect-transistors) as well as interconnects in a seamless manner. Thereby, the use of external contacts is alleviated, resulting in substantial reduction in contact parasitics. Calculations based on tight-binding theory and Non-Equilibrium Green's Function (NEGF) formalism solved self-consistently with the Poisson's equation are used to analyze the intricate properties of the proposed structure. This constitutes the first NEGF simulation based demonstration that devices and interconnects can be built using the “same starting material” – graphene. Moreover, it is also shown that all-graphene circuits can surpass the static performances of the 22 nm complementary metal-oxide-semiconductor devices, including minimum operable supply voltage, static noise margin, and power consumption.

1.
K. S.
Novoselov
,
A. K.
Geim
,
S. V.
Morozov
,
D.
Jiang
,
Y.
Zhang
,
S. V.
Dubonos
,
I. V.
Grigorieva
, and
A. A.
Firsov
,
Science
306
(
5696
),
666
669
(
2004
).
2.
Q.
Zhang
,
T.
Fang
,
A.
Seabaugh
,
H.
Xing
, and
D.
Jena
,
IEEE Electron. Devices Lett.
29
(
12
),
1344
1346
(
2008
).
3.
P.
Zhao
,
J.
Chauhan
, and
J.
Guo
,
Nano Lett.
9
(
2
),
684
688
(
2009
).
4.
Y.
Khatami
and
K.
Banerjee
, in
Proceedings of Device Research Conference
(
IEEE
,
2009
), pp.
197
198
.
5.
Y.
Khatami
,
M.
Krall
,
H.
Li
,
C.
Xu
, and
K.
Banerjee
, in
Proceedings of Device Research Conference
(
IEEE
,
2010
), pp.
65
66
.
6.
K.-T.
Lam
,
D.
Seah
,
S.-K.
Chin
,
S. B.
Kumar
,
G.
Samudra
,
Y.-C.
Yeo
, and
G.
Liang
,
IEEE Electron. Devices Lett.
31
(
6
),
555
557
(
2010
).
7.
J.
Kang
,
Y.
He
,
J.
Zhang
,
X.
Yu
,
X.
Guan
, and
Z.
Yu
,
Appl. Phys. Lett.
96
(
25
),
252105
(
2010
).
8.
C.
Xu
,
H.
Li
, and
K.
Banerjee
,
IEEE Trans. Electron. Devices
56
(
8
),
1567
1578
(
2009
).
9.
H.
Li
,
C.
Xu
,
N.
Srivastava
, and
K.
Banerjee
,
IEEE Trans. Electron. Devices
56
(
9
),
1799
1821
(
2009
).
10.
D.
Sarkar
,
C.
Xu
,
H.
Li
, and
K.
Banerjee
,
IEEE Trans. Electron. Devices
58
(
3
),
843
852
(
2011
).
11.
D.
Sarkar
,
C.
Xu
,
H.
Li
, and
K.
Banerjee
,
IEEE Trans. Electron. Devices
58
(
3
),
853
859
(
2011
).
12.
Y.-M.
Lin
,
A.
Valdes-Garcia
,
S.-J.
Han
,
D. B.
Farmer
,
I.
Meric
,
Y.
Sun
,
Y.
Wu
,
C.
Dimitrakopoulos
,
A.
Grill
,
P.
Avouris
and
K. A.
Jenkins
,
Science
332
(
6035
),
1294
1297
(
2011
).
13.
X.
Wang
and
H.
Dai
,
Nat. Chem.
2
(
8
),
661
665
(
2010
).
14.
K.
Tahy
,
W. S.
Hwang
,
J. L.
Tedesco
,
R. L.
Myers-Ward
,
P. M.
Campbell
,
C. R.
Eddy
,
D. K.
Gaskill
,
H.
Xing
,
A.
Seabaugh
and
D.
Jena
, in
Proceedings of Device Research Conference
(
IEEE
,
2011
), pp.
39
40
.
15.
J.
Cai
,
P.
Ruffieux
,
R.
Jaafar
,
M.
Bieri
,
T.
Braun
,
S.
Blankenburg
,
M.
Muoth
,
A. P.
Seitsonen
,
M.
Saleh
,
X.
Feng
,
K.
Müllen
, and
R.
Fasel
,
Nature
466
(
7305
),
470
473
(
2010
).
16.
L.
Jiao
,
L.
Zhang
,
X.
Wang
,
G.
Diankov
, and
H.
Dai
,
Nature
458
(
7240
),
877
880
(
2009
).
17.
Z. F.
Wang
,
Q.
Li
,
H.
Zheng
,
H.
Ren
,
H.
Su
,
Q. W.
Shi
, and
J.
Chen
,
Phys. Rev. B
75
(
11
),
113406
(
2007
).
18.
H.
Liu
,
Y.
Liu
, and
D.
Zhu
,
J. Mater. Chem.
21
(
10
),
3335
3345
(
2011
).
19.
S. J.
Goncher
,
L.
Zhao
,
A. N.
Pasupathy
, and
G. W.
Flynn
,
Nano Lett.
13
(
4
),
1386
1392
(
2013
).
20.
M.
Bokdam
,
P. A.
Khomyakov
,
G.
Brocks
,
Z.
Zhong
, and
P. J.
Kelly
,
Nano Lett.
11
(
11
),
4631
4635
(
2011
).
21.
D.
Sarkar
,
M.
Krall
, and
K.
Banerjee
,
Appl. Phys. Lett.
97
(
26
),
263109
(
2010
).
22.
S.
Datta
,
Quantum Transport: Atom to Transistor
(
Cambridge University Press
,
Cambridge
,
2005
).
23.
D.
Gunlycke
and
C. T.
White
,
Phys. Rev. B
77
(
11
),
115116
(
2008
).
24.
X.
Li
,
X.
Wang
,
L.
Zhang
,
S.
Lee
, and
H.
Dai
,
Science
319
(
5867
),
1229
1232
(
2008
).
25.
R.
Grassi
,
A.
Gnudi
,
E.
Gnani
,
S.
Reggiani
, and
G.
Baccarani
,
J. Comput. Electron.
8
(
3–4
),
441
450
(
2009
).
26.
W.
Zhao
and
Y.
Cao
,
ACM J. Emerging Technol. Comput. Syst. (JETC)
3
(
1
),
1
(
2007
).
You do not currently have access to this content.